scholarly journals New theory for Mode I crack-tip dislocation emission

2017 ◽  
Vol 106 ◽  
pp. 315-337 ◽  
Author(s):  
Predrag Andric ◽  
W.A. Curtin
1994 ◽  
Vol 364 ◽  
Author(s):  
M. Ludwig ◽  
P. Gumbsch

AbstractThe atomistic processes during fracture of NiAl are studied using a new embedded atom (EAM) potential to describe the region near the crack tip. To provide the atomistically modeled crack tip region with realistic boundary conditions, a coupled finite element - atomistic (FEAt) technique [1] is employed. In agreement with experimental observations, perfectly brittle cleavage is observed for the (110) crack plane. In contrast, cracks on the (100) plane either follow a zig-zag path on (110) planes, or emit dislocations. Dislocation generation is studied in more detail under mixed mode I/II loading conditions.


1995 ◽  
Vol 50 (2) ◽  
pp. 165-173 ◽  
Author(s):  
Jianqiao Chen ◽  
Shigeo Takezono
Keyword(s):  
Mode I ◽  

2007 ◽  
Vol 348-349 ◽  
pp. 817-820
Author(s):  
Zhen Qing Wang ◽  
Ji Bin Wang ◽  
Wen Yan Liang ◽  
Juan Su

The viscosity of material is considered at propagating crack-tip. Under the assumption that the artificial viscosity coefficient is in inverse proportion to the power law of the plastic strain rate, an elastic-viscoplastic asymptotic analysis is carried out for moving crack-tip fields in power-hardening materials under plane-strain condition. A continuous solution is obtained containing no discontinuities. The variations of the numerical solution are discussed for mode I crack according to each parameter. It is shown that stress and strain both possess exponential singularity. The elasticity, plasticity and viscosity of material at the crack-tip only can be matched reasonably under linear-hardening condition. The tip field contains no elastic unloading zone for mode I crack.


2013 ◽  
Vol 109 ◽  
pp. 105-116 ◽  
Author(s):  
Y.J. Xie ◽  
J. Li ◽  
X.Z. Hu ◽  
X.H. Wang ◽  
M. Cai ◽  
...  

2010 ◽  
Vol 77 (7) ◽  
pp. 1048-1057 ◽  
Author(s):  
X.L. Fu ◽  
G.F. Wang ◽  
X.Q. Feng

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