Molecular dynamics simulation of primary irradiation defect formation in Fe–10%Cr alloy

2006 ◽  
Vol 351 (1-3) ◽  
pp. 56-64 ◽  
Author(s):  
Jae-Hyeok Shim ◽  
Hyon-Jee Lee ◽  
Brian D. Wirth
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Defect Formation ◽  
Dynamics Simulation ◽  
Irradiation Defect ◽  
Primary Irradiation

Photoluminescence study of defects induced by B10H14 ions

2001 ◽  
Vol 669 ◽  
Author(s):  
Noriaki Toyoda ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada ◽  
Kazumi Wada ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Ion Implantation ◽  
Defect Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Annealing Process ◽  
Dynamics Simulation ◽  
Line Center ◽  
Photoluminescence Study ◽  
Defect Reactions

ABSTRACTDefect formation in Si by B10H14 (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B10H14+ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperatureannealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B10H14 is expected to be different from that of B+ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B10H14 implantation creates a larger number of dislocated Si atoms than that of B+ implantation with the same energy per atom. This characteristic of B10H14 implantation may cause the different defect reactions in subsequent annealing process.

scholarly journals Molecular dynamics simulation of low-energy recoil events in titanate pyrochlores

RSC Advances ◽  
2017 ◽  
Vol 7 (56) ◽  
pp. 35403-35410
Author(s):  
Liyuan Dong ◽  
Wahyu Setyawan ◽  
Yuhong Li ◽  
Ram Devanathan ◽  
Fei Gao
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Molecular Dynamics Simulations ◽  
Defect Formation ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Formation Dynamics ◽  
Dynamics Simulations

Molecular dynamics simulations of low-energy displacements in titanate pyrochlores have been carried out along three main directions, to determine Ed for A, Ti and O, corresponding defect configurations, and defect formation dynamics.

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