Growth, structural and optical properties of non-stoichiometric CuIn(S1−xSex)2 thin films deposited by solution growth technique for photovoltaic application

2006 ◽  
Vol 67 (4) ◽  
pp. 767-773 ◽  
Author(s):  
S. Chavhan ◽  
R. Sharma
2009 ◽  
Vol 6 (1) ◽  
pp. 135-140
Author(s):  
Baghdad Science Journal

Structural, optical, and electrical properties of thin films of CdS : Zn prepared by the solution – growth technique are reported as a function of zinc concentration. CdS are window layers influencing the photovoltaic response of CIS solar cells. The zinc doping concentration was varied from 0.05 to 0.5 wt %, zinc doping apparently increase the band gap and lowers the resistivity. All beneficial optical properties of chemically deposited CdS thin films for application as window material in heterojunction optoelectronic devices are retained. Heat treatment in air at 400 °C for 1h modify crystalline structure, optical, and electrical properties of solution growth deposited CdS : Zn films.


1999 ◽  
Vol 38 (1) ◽  
pp. 28-32 ◽  
Author(s):  
I Grozdanov ◽  
M Najdoski ◽  
S.K Dey

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