Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory

2021 ◽  
Vol 151 ◽  
pp. 109901
Author(s):  
Sreekanth Ginnaram ◽  
Siddheswar Maikap
2016 ◽  
Vol 8 (29) ◽  
pp. 19158-19167 ◽  
Author(s):  
Zhimin Liang ◽  
Pingyang Zeng ◽  
Pengyi Liu ◽  
Chuanxi Zhao ◽  
Weiguang Xie ◽  
...  

Author(s):  
Hun Kim ◽  
Sangin Bang ◽  
Kyeong-Jun Min ◽  
Young-Geun Ham ◽  
Seong-Jin Park ◽  
...  

2021 ◽  
Author(s):  
Sungjun Kim ◽  
Keun Heo ◽  
Sunghun Lee ◽  
Seunghwan Seo ◽  
Hyeongjun Kim ◽  
...  

Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.


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