Structural and optical properties of Dy3+:YAlO3 phosphors for yellow light-emitting diode applications

Author(s):  
Yingshu Lian ◽  
Yan Wang ◽  
Jianfu Li ◽  
Zhaojie Zhu ◽  
Zhenyu You ◽  
...  
2018 ◽  
Vol 112 (5) ◽  
pp. 052105 ◽  
Author(s):  
Guijuan Zhao ◽  
Lianshan Wang ◽  
Huijie Li ◽  
Yulin Meng ◽  
Fangzheng Li ◽  
...  

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.


2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Aditya Prabaswara ◽  
Jung-Wook Min ◽  
Chao Zhao ◽  
Bilal Janjua ◽  
Daliang Zhang ◽  
...  

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