Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

In this paper, the optical properties of GaN-based green light emitting diode (LED) are investigated and the internal quantum efficiency (IQE) values are measured by temperature dependent photoluminescence (TDPL) and power dependent photoluminescence (PDPL) methods. The "S-shaped” shift of peak wavelength measured at different temperature disappears gradually and the spectra broadening can be observed with increasing excitation power. The IQE calculation results of TDPL, which use the integrated intensity measured at low temperature as unity, can be modified by PDPL in order to acquire more accurate IQE values.

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n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

Applied Physics Letters ◽

10.1063/5.0035343 ◽

2021 ◽

Vol 118 (2) ◽

pp. 021102

Author(s):

Dong-Pyo Han ◽

Ryoto Fujiki ◽

Ryo Takahashi ◽

Yusuke Ueshima ◽

Shintaro Ueda ◽

...

Keyword(s):

Radiative Recombination ◽

Light Emitting Diode ◽

Green Light ◽

Light Emitting ◽

Recombination Centers

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OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156407004266 ◽

2007 ◽

Vol 17 (01) ◽

pp. 81-84

Author(s):

J. Senawiratne ◽

M. Zhu ◽

W. Zhao ◽

Y. Xia ◽

Y. Li ◽

...

Keyword(s):

Optical Properties ◽

Quantum Well ◽

Stark Effect ◽

Light Emitting Diode ◽

Chemical Vapor ◽

Green Emission ◽

Luminescence Spectroscopy ◽

Light Emitting ◽

Quantum Confined Stark Effect ◽

Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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Effects of green light emitting diode light during incubation and dietary organic macro and trace minerals during rearing on tibia characteristics of broiler chickens at slaughter age

Poultry Science ◽

10.1016/j.psj.2020.11.042 ◽

2020 ◽

Author(s):

B.C. Güz ◽

R. Molenaar ◽

I.C. de Jong ◽

B. Kemp ◽

M. van Krimpen ◽

...

Keyword(s):

Broiler Chickens ◽

Light Emitting Diode ◽

Green Light ◽

Trace Minerals ◽

Light Emitting ◽

Slaughter Age

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Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19460 ◽

2021 ◽

Vol 21 (11) ◽

pp. 5648-5652

Author(s):

ll-Wook Cho ◽

Bom Lee ◽

Kwanjae Lee ◽

Jin Soo Kim ◽

Mee-Yi Ryu

Keyword(s):

Optical Properties ◽

Decay Time ◽

Stark Effect ◽

Light Emitting Diodes ◽

Green Light ◽

Time Resolved ◽

Light Emitting ◽

Quantum Confined Stark Effect ◽

Short Period ◽

Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

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