Abstract
Silicon is the reference material of microelectronics, is readily available, relatively unexpensive, and its use may take profit of a fantastic technology. This may explain why a substantial effort has focused on improving its thermoelectric efficiency, either by top-down nanostructuring or through suitable processing. In this paper we report an analysis of the electronic transport properties of heavily boron-doped nanocrystalline silicon films. High-temperature thermal treatments are confirmed to remarkably increase its thermoelectric power factor. Electrical conductivity and Hall effect measurements were carried out over the temperature range 20–300 K along with Seebeck coefficient measurements. We provide evidence of the occurrence of low-temperature hopping conduction between impurity subbands. Dopant ionization was studied as a function of temperature. Freeze-out temperature was found to correlate with the Seebeck coefficient in agreement with Pisarenko equation. This brings to the conclusion that, while untreated samples are weakly degenerate, the thermal processing reverts them into non-degenerate semiconductors, in spite of the high doping level.
Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition