α/β Phase Transformation in Porous Reaction-Bonded Silicon Nitride Ceramics

2011 ◽  
Vol 194-196 ◽  
pp. 2225-2228
Author(s):  
Jie Xu ◽  
Jun Bo Wang ◽  
Wei Hua Cui ◽  
Xiao Lei Su ◽  
Wan Cheng Zhou
Keyword(s):  
Dielectric Constant ◽  
Phase Transformation ◽  
Dielectric Properties ◽  
Silicon Nitride ◽  
Dielectric Loss ◽  
Point Defects ◽  
Nitriding Temperature ◽  
Β Phase ◽  
Nitride Ceramics ◽  
Tan Δ

Porous reaction-bonded silicon nitride ceramics with different values of α/β ratio were obtained by setting the nitriding temperature and time. The influence of α/β phase transformation on the dielectric properties of porous silicon nitride ceramics has been investigated. The results show that the α/β transformation occurs when the nitriding temperature is higher than 1400°C . The values of α/β ratio decrease with increase of nitriding temperature and time. The dielectric constant ε′ and the dielectric loss tan δ of the samples increase because of the α/β transformation, and the change of the dielectric loss is more obvious. The increase of concentrations of point defects due to the α/β transformation leads to the significant increase of the dielectric loss.

Dielectric Properties of Li-Doped CaCu3Ti4O12 Ceramics

2011 ◽  
Vol 687 ◽  
pp. 251-256 ◽  
Author(s):  
Ying He ◽  
Huai Wu Zhang ◽  
Yuan Xun Li ◽  
Wei Wei Ling ◽  
Yun Yan Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Secondary Phase ◽  
Doping Amount ◽  
Spectroscopy Analysis ◽  
Low Dielectric ◽  
Tan Δ ◽  
High Dielectric ◽  
Impedance Spectroscopy Analysis

CaCu3Ti4O12 ceramics doped with 0-2.0 wt% Li2CO3 were prepared by the solid-state reaction, and their electric and dielectric properties were investigated. It is found that these ceramics had the properties of high dielectric constant and comparatively low dielectric loss. At the doping amount of 0.5 wt%, the dielectric constant is kept to be 105 with weak frequency dependence below 105 Hz, and its loss tangent (tan δ) is suppressed below 0.1 between 300 Hz-5 kHz (with the minimum value of 0.06 at 1 kHz from 218 K to 338 K). The impedance spectroscopy analysis confirms that the decrease of dielectric loss is mainly due to the increase of resistance in the grain boundary, which may be related to the influence of Ti4O7 secondary phase. Our result indicates that doping Li2CO3 is an efficient method to optimize the dielectric properties of CaCu3Ti4O12.

Study of Ac Conductivity and Dielectric Properties of PMMA with Fe2O3+ Al2O3 Composite Films

2013 ◽  
Vol 209 ◽  
pp. 14-17
Author(s):  
Basavaraja Sannakki ◽  
Anita Gandhe ◽  
V.H. Doddamani
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Polymer Composite ◽  
Composite Films ◽  
Weight Percent ◽  
X Ray ◽  
Morphological Studies ◽  
Tan Δ ◽  
Al2o3 Films

Abstract. The PMMA with Fe2O3+ Al2O3 films at different weight percent have been used for measurement of dielectric properties such as dielectric constant, dielectric loss and a. c. conductivity as a function of frequency over the range 50 Hz – 5 MHz at room temperature. The dielectric constant and the dielectric loss (tan δ) of the polymer composite films decreases exponentially at lower frequencies over the range 100 Hz-1 kHz, where as above 1 kHz the values of dielectric constant remains same. But, it has been observed that the value of dielectric constant of PMMA composite films with Fe2O3+ Al2O3 increases as weight percent of Fe2O3+ Al2O3 increases. The a c conductivity of the polymer composite films remains constant over the frequency range 50 Hz to 300 K Hz and afterwards it increases exponentially. Further, PMMA with Fe2O3+ Al2O3 have been characterized using X-Ray diffractometer for the crystallinity. The morphological studies have been made using the FESEM.

Comparative Study on Electrical and Dielectric Properties of Sintered Nano and Micro Silicon Nitride Ceramics

2016 ◽  
Vol 2 (1) ◽  
pp. 13-18
Author(s):  
Imran Khan ◽  
M S A Khan
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Properties ◽  
Silicon Nitride ◽  
Dc Conductivity ◽  
Temperature Range ◽  
Nitride Ceramics ◽  
Electrical And Dielectric Properties ◽  
Sintered Silicon

In the present work we have studied the electrical conductivity, dielectric constant and dielectric loss of Sintered Silicon Nitride ceramics. In this study it was found that the grain size has great impact on electrical conductivity and dielectric properties of Sintered Silicon Nitride Ceramics. The result shows more efficiency of electrical and dielectric properties with nano sized grains.  The sintering was performed in a programmable furnace at 950 K. The dc conductivity measured in the temperature range 300 K to 900 K. At higher temperature (T > 800 K), the dc conductivity increases exponentially with temperature for both of the investigated samples. Dielectric constant and loss are measured in the temperature range 300 K to 900 K with frequency range 1 KHz to 1 MHz. To confirm the grain size, the samples are characterized by the Scanning Electron Microscope (SEM). These types of samples can be used as a high temperature semi-conducting materials.

Sintering, Microstructure and Dielectric Properties of Ca-Al-B-Si-O Glass/Al2O3 Composites with Various SiO2 Content

2011 ◽  
Vol 130-134 ◽  
pp. 1516-1519
Author(s):  
Ming Liu ◽  
Hong Qing Zhou ◽  
Hai Kui Zhu ◽  
Min Liu ◽  
Jian Xin Zhao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Silicon Dioxide ◽  
Bulk Density ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric ◽  
Tan Δ ◽  
Silicon Dioxide Content

The effects of silicon dioxide addition on the sintering, microstructure and microwave dielectric properties of Ca-Al-B-Si-O glass/Al2O3 composites were investigated. Results show that: Increasing the silicon dioxide content in the glass leads to the corresponding rise of bulk density, dielectric constant of the LTCC materials and the decrease of its dielectric loss and porosity. A bulk density of 2.92 g·cm-3, a porosity of 0.2%, aεr value of 7.11 and a tan δ value of 0.00096(measured at 10 MHz) are obtained for 68 wt% silicon dioxide of the samples sintered at 875°C for 30 min.

DIELECTRIC PROPERTIES OF Li-Sb FERRITES

2005 ◽  
Vol 19 (18) ◽  
pp. 899-905 ◽  
Author(s):  
SHIVAJI CHONGTHAM ◽  
SUMITRA PHANJOUBAM ◽  
H. N. K. SARMA ◽  
RADHAPIYARI LAISHRAM ◽  
CHANDRA PRAKASH
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Loss Tangent ◽  
Room Temperature ◽  
Substitution Level ◽  
Higher Temperature ◽  
Tan Δ ◽  
Almost All ◽  
Frequency Curves

Dielectric properties such as dielectric constant (ε′) and dielectric loss tangent ( tan δ) of Li 0.5+x Fe 2.5-2x Sb x O 4 ferrites, 0.10≤ x ≤0.30 in steps of 0.05 have been investigated as a function of composition, frequency and temperature. The dielectric constant showed dispersion with frequency in the range of 100 Hz–1 MHz. Peaks were observed in the tan δ versus frequency curves for almost all the samples. The temperature variation of dielectric constant for the different samples was studied at 10 kHz in the temperature range from room temperature to 433 K. Peaks were observed for some of the samples. The peaks were seen to shift towards higher temperature region as the substitution level increases. The mechanisms involved in the processes are discussed in this paper.

Dielectric Properties of PVDF-TrFE/PMMA: TiO2 Multilayer Dielectric Thin Films

2012 ◽  
Vol 576 ◽  
pp. 582-585 ◽  
Author(s):  
Ismail Lyly Nyl ◽  
Mohamad Hafiz Mohd Wahid ◽  
Zulkefle Habibah ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Spin Coating ◽  
Frequency Range ◽  
Dielectric Thin Films ◽  
Two Samples ◽  
Coating Method ◽  
Tan Δ ◽  
Multilayer Dielectric

This paper reports on the dielectric properties of multilayer PVDF-TrFE/PMMA:TiO2 thin film. Two samples were fabricated on ITO substrates; one with PVDF-TrFE only and another PMMA:TiO2 on PVDF-TrFE on (PVDF-TrFE/PMMA:TiO2). Both samples were produced by spin coating method. Dielectric properties were characterized using impedance spectroscopic. Dielectric constant, k, capacitance and dielectric loss, tan δ values of PMMA:TiO2/PVDF-TrFE were measured in the frequency range 0 – 50 kHz. The result for dielectric loss did not show any significant different between the samples with and without nanocomposite PVDF-TrFE layer. However, the dielectric constant are affected when depositing a nanocomposite PVDF-TrFE layer on PMMA:TiO2. The dielectric constant is decreased by 0.3 from 7.9 to 7.6.

Sn-doped BaO–TiO2–ZnO Microwave Ceramics

2002 ◽  
Vol 17 (6) ◽  
pp. 1550-1552 ◽  
Author(s):  
Wu Shunhua ◽  
Wang Guoqing ◽  
Zhao Yushuang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Temperature Coefficient ◽  
Sintering Temperature ◽  
Volume Resistivity ◽  
Ceramic Materials ◽  
Microwave Ceramics ◽  
Microwave Ceramic ◽  
Tan Δ

Sn-doped BaO–TiO2–ZnO (BTZ) microwave ceramic materials were investigated as a function of SnO2 content. Addition of a small amount of SnO2 (0.01–0.06 wt%) lowered the sintering temperature of the system to 1160 °C and also greatly reduced the dielectric loss (tan δ), which is closely related to the insulation resistivity. The Sn-doped BTZ materials were found to have excellent dielectric properties at 1 GHz with dielectric constant Ε ≈tangent tan δ ≤ 1 × 10−4, temperature coefficient of dielectric constant, αΕ = 0 ± 30 ppm/°C, and volume resistivity ρv ≥ 1013 ω cm.

Effect of Microstructure on Dielectric Properties of Si3N4 at Microwave Frequency

2005 ◽  
Vol 287 ◽  
pp. 247-252 ◽  
Author(s):  
Min Kyu Park ◽  
Ha Neul Kim ◽  
Kee Sung Lee ◽  
Seung Su Baek ◽  
Eul Son Kang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Silicon Nitride ◽  
Dielectric Loss ◽  
Microwave Dielectric Properties ◽  
Microwave Frequency ◽  
Constant E ◽  
Superior Mechanical Properties ◽  
Effect Of Microstructure

Silicon nitride (Si3N4) has been researched intensively because of superior mechanical properties up to high temperature. The mechanical properties of Si3N4 are strongly related to microstructure. The microstructure control of silicon nitride is well known to be a key issue for tailoring the mechanical properties of structural ceramics. This work was performed to reveal the effect of microstructure on dielectric properties at microwave frequency. Three starting powders were used fine, course a-Si3N4 and b-Si3N4. Sintering additives, 5 wt.% Y2O3, 2 wt.% Al2O3 and 1 wt.% MgO were mixed with each starting powder. Si3N4 ceramic with different b/a phase specimen were obtained by hot pressing. The post-resonator method was used for the measurement of dielectric properties, dielectric constant (e′) and dielectric loss (tand), at microwave frequency range. Silicon nitride ceramics show dielectric constant of 8.1 – 8.6 and dielectric loss 1.1 x 10-3 – 5.6 x 10-3. The effect of grain size and the role of phase on microwave dielectric properties are discussed.

Microstructure and Microwave Dielectric Properties of BaTi4O9 Ceramics Derived from a Sol-Gel Precursor

2011 ◽  
Vol 326 ◽  
pp. 127-130
Author(s):  
Xian Li Huang ◽  
Fu Ping Wang ◽  
Ying Song
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Sol Gel ◽  
Microwave Dielectric Properties ◽  
Sintering Process ◽  
Temperature Coefficients ◽  
Microwave Dielectric ◽  
Ceramic Samples ◽  
Quality Factor Q

In the present work, the microstructure and microwave dielectric properties of BaTi4O9 ceramics derived from a sol-gel precursor were presented. Density measuring results demonstrated that the largest densities of ceramic sample about 96.7% could be reached by virtue of a cool iso-static press and a sintering process at at 1300 °C for 6 hours. The dielectric constant (εr), quality factor (Q×f) and the temperature coefficients (τf) of the BaTi4O9 ceramic samples were 36.65, 28000 GHz, +20.2 ppm/°C, respectively. XRD, SEM and XPS were used to characterize the microstructure of the ceramics samples. Substantial Ti3+ was proposed to be the cause of dielectric loss.

Preparation and Dielectric Properties of 1-3 La Modified PZT/IPN Piezoelectric Composites

2010 ◽  
Vol 105-106 ◽  
pp. 355-358 ◽  
Author(s):  
Z.L. Zhu ◽  
Dong Yan Tang ◽  
X.H. Zhang ◽  
Y.J. Qiao
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Lead Zirconate Titanate ◽  
Polymer Network ◽  
Lead Zirconate ◽  
Interpenetrating Polymer Network ◽  
Ceramic Fibers ◽  
Piezoelectric Composites

To prevent the potential cracking of gel fibers, La modified lead zirconate titanate (PLZT) ceramic fibers with diameter within 50µm were achieved by embedding into PLZT powders during the heat treatment. Then the 1-3 PLZT fiber/interpenetrating polymer network (IPN) piezoelectric composites were prepared by casting the IPN precursors onto the well aligned ceramic fibers. The influences of the heating temperatures and La amounts on the dielectric constant, dielectric loss with frequencies and piezoelectric constant of PLZT were investigated in detail. The morphologies of fibers and composites were observed by biological microscope. And also, the dielectric constant of PLZT fibers and PLZT fiber/IPN piezoelectric composites were detected.

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