Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFET

2011 ◽  
Vol 88 (4) ◽  
pp. 362-365 ◽  
Author(s):  
K.H. Chan ◽  
B. Benbakhti ◽  
C. Riddet ◽  
J.R. Watling ◽  
A. Asenov
Keyword(s):  
Quantum Well ◽  
Simulation Study ◽  
Gate Length

Simulation Study of Performance for a 20-nm Gate Length In$_{\bf 0.53}$Ga$_{\bf 0.47}$As Implant Free Quantum Well MOSFET

2012 ◽  
Vol 11 (4) ◽  
pp. 808-817 ◽  
Author(s):  
Brahim Benbakhti ◽  
Antonio Martinez ◽  
Karol Kalna ◽  
Geert Hellings ◽  
Geert Eneman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Simulation Study ◽  
Gate Length ◽  
20 Nm

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's

1993 ◽  
Vol 28 (7) ◽  
pp. 829-834 ◽  
Author(s):  
Z.-G. Wang ◽  
M. Berroth ◽  
U. Nowotny ◽  
M. Ludwig ◽  
P. Hofmann ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Optical Systems ◽  
Gate Length ◽  
Diode Voltage

Quantum ballistic simulation study of In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET

2014 ◽  
Author(s):  
Sudipta Romen Biswas ◽  
Kanak Datta ◽  
Abir Shadman ◽  
Ehsanur Rahman ◽  
Quazi D. M. Khosru
Keyword(s):  
Quantum Well ◽  
Simulation Study

Effect of Band Gap Offset on ZnO (Cd, Mg)/ZnO:P Multi Quantum Well Light Emitting Diodes: A Simulation Study

2014 ◽  
Vol 3 (2) ◽  
pp. 185-188 ◽  
Author(s):  
Amanpal Singh ◽  
B. C. Joshi ◽  
Dinesh Kumar ◽  
P. K. Khanna ◽  
Mukesh Kumar
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Simulation Study ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Multi Quantum Well

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

2012 ◽  
Vol 21 (6) ◽  
pp. 068506 ◽  
Author(s):  
Le-Juan Wu ◽  
Shu-Ti Li ◽  
Chao Liu ◽  
Hai-Long Wang ◽  
Tai-Ping Lu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Simulation Study ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Hole Injection ◽  
Multiple Quantum ◽  
Light Emitting
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