Ulis 2011 Ultimate Integration on Silicon
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59
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Published By IEEE

9781457700903
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Two-dimensional carrier mapping at the nanometer-scale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

2011 ◽  
Author(s):  
Pierre Eyben ◽  
Trudo Clarysse ◽  
Jay Mody ◽  
Aftab Nazir ◽  
Andreas Schulze ◽  
...  
Keyword(s):  
High Vacuum ◽  
Nanometer Scale ◽  
Two Dimensional ◽  
Spreading Resistance

RF performance of the novel planar-type body-connected FinFET fabricated by isolation-last and self-alignment process

2011 ◽  
Author(s):  
Po-Hsieh Lin ◽  
Jyi-Tsong Lin ◽  
Yi-Chuen Eng ◽  
Yu-Che Chang
Keyword(s):  
The Novel ◽  
Alignment Process ◽  
Rf Performance

Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices

2011 ◽  
Author(s):  
S. Makovejev ◽  
V. Kilchytska ◽  
M. K. Md Arshad ◽  
D. Flandre ◽  
F. Andrieu ◽  
...  
Keyword(s):  
Thin Body ◽  
Substrate Effects ◽  
Self Heating

2D Analytical calculation of the source/drain access resistance in DG-MOSFET structures

2011 ◽  
Author(s):  
Thomas Holtij ◽  
Mike Schwarz ◽  
Alexander Kloes ◽  
Benjamin Iniguez
Keyword(s):  
Analytical Calculation ◽  
Dg Mosfet ◽  
Access Resistance

Annealing investigations for high-k first n-channel In0.53Ga0.47As MOSFET development

2011 ◽  
Author(s):  
Vladimir Djara ◽  
Karim Cherkaoui ◽  
Kevin Thomas ◽  
Emanuele Pelucchi ◽  
Dan O'Connell ◽  
...  
Keyword(s):  
High K

Analytical model of ballistic current for GAA nanowire MOSFET including band structure effects: Application to ring oscillator

2011 ◽  
Author(s):  
J. Dura ◽  
S. Martinie ◽  
D. Munteanu ◽  
F. Triozon ◽  
S. Barraud ◽  
...  
Keyword(s):  
Band Structure ◽  
Analytical Model ◽  
Ring Oscillator ◽  
Nanowire Mosfet

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

2011 ◽  
Author(s):  
M. Schmidt ◽  
R. A. Minamisawa ◽  
S Richter ◽  
J.-M. Hartmann ◽  
R. Luptak ◽  
...  
Keyword(s):  
Band To Band Tunneling

Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude

2011 ◽  
Author(s):  
A. N. Nazarov ◽  
C. W. Lee ◽  
A. Kranti ◽  
I. Ferain ◽  
R. Yan ◽  
...  
Keyword(s):  
Noise Amplitude ◽  
Random Telegraph Noise ◽  
Channel Mobility ◽  
Telegraph Noise ◽  
Nanowire Mosfets
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