IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305)

Effects of carrier heating on the frequency chirping of semiconductor lasers

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668604 ◽

2002 ◽

Author(s):

Tien-Li Sung ◽

Chih-Hsiung Chen ◽

Chin-Yi Tsai ◽

Chin-Yao Tsai

Keyword(s):

Semiconductor Lasers ◽

Carrier Heating ◽

Frequency Chirping

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Long-term current instability of AlGaAs/GaAs HBTs: an overview

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668217 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.J. Liou

Keyword(s):

Current Instability

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Impact ionization and quantum confinement effects on the microwave performance of narrow bandgap channel millimeter-wave HFETs

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668583 ◽

2002 ◽

Author(s):

C.R. Bolognesi ◽

M.W. Dvorak ◽

D.H. Chow

Keyword(s):

Millimeter Wave ◽

Quantum Confinement ◽

Impact Ionization ◽

Confinement Effects ◽

Quantum Confinement Effects ◽

Narrow Bandgap

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Interest of 0.15 μm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668598 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Chevalier ◽

F. Dessenne ◽

M. Badirou ◽

J.L. Thobel ◽

R. Fauquembergue

Keyword(s):

Millimeter Wave ◽

Gate Length ◽

Composite Channel

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Microwave power HBT design optimization

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668517 ◽

2002 ◽

Author(s):

R.G. Davis ◽

M.A. Crouch

Keyword(s):

Design Optimization ◽

Microwave Power

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Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668503 ◽

2002 ◽

Cited By ~ 1

Author(s):

M. Borgarino ◽

J.G. Tartarin ◽

S. Delage ◽

R. Plana ◽

F. Fantini ◽

...

Keyword(s):

Surface Quality ◽

Base Surface ◽

Extrinsic Base

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The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668623 ◽

2002 ◽

Author(s):

F. Borouriand ◽

M. Jostock ◽

M. Hopkinson ◽

P. Kordos ◽

E. Weber ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layers ◽

Electrical Behaviour ◽

Low Temperature Gaas

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Two-dimensional analysis of gate-lag phenomena in recessed-gate GaAs MESFETs

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668207 ◽

2002 ◽

Author(s):

K. Horio ◽

T. Yamada

Keyword(s):

Dimensional Analysis ◽

Two Dimensional ◽

Recessed Gate

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A novel time-division demultiplexer based on the management of propagation modes

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668587 ◽

2002 ◽

Author(s):

K. Narahara ◽

T. Otsuji ◽

E. Sano

Keyword(s):

Time Division

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Nonlinear modelling of an almost constant transconductance MESFET power transistor

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668206 ◽

2002 ◽

Author(s):

T.A. Bos ◽

U. Lott ◽

W. Bachtold

Keyword(s):

Power Transistor ◽

Nonlinear Modelling ◽

Constant Transconductance

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IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Effects of carrier heating on the frequency chirping of semiconductor lasers

Long-term current instability of AlGaAs/GaAs HBTs: an overview

Impact ionization and quantum confinement effects on the microwave performance of narrow bandgap channel millimeter-wave HFETs

Interest of 0.15 μm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers

Microwave power HBT design optimization

Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs

The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers

Two-dimensional analysis of gate-lag phenomena in recessed-gate GaAs MESFETs

A novel time-division demultiplexer based on the management of propagation modes

Nonlinear modelling of an almost constant transconductance MESFET power transistor

Export Citation Format

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Effects of carrier heating on the frequency chirping of semiconductor lasers

Long-term current instability of AlGaAs/GaAs HBTs: an overview

Impact ionization and quantum confinement effects on the microwave performance of narrow bandgap channel millimeter-wave HFETs

Interest of 0.15 μm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers

Microwave power HBT design optimization

Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs

The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers

Two-dimensional analysis of gate-lag phenomena in recessed-gate GaAs MESFETs

A novel time-division demultiplexer based on the management of propagation modes

Nonlinear modelling of an almost constant transconductance MESFET power transistor

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305)
Latest Publications