Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

2016 ◽  
Vol 159 ◽  
pp. 190-197 ◽  
Author(s):  
Mi Ra Park ◽  
Yawar Abbas ◽  
Haider Abbas ◽  
Quanli Hu ◽  
Tae Sung Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Tantalum Oxide ◽  
Switching Characteristics ◽  
Bilayer Devices

Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions

2018 ◽  
Vol 124 (15) ◽  
pp. 152109 ◽  
Author(s):  
Karol Fröhlich ◽  
Ivan Kundrata ◽  
Michal Blaho ◽  
Marian Precner ◽  
Milan Ťapajna ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Tantalum Oxide

Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices

2019 ◽  
Vol 58 (4) ◽  
pp. 044001 ◽  
Author(s):  
Quanli Hu ◽  
Haider Abbas ◽  
Tae Su Kang ◽  
Tae Sung Lee ◽  
Nam Joo Lee ◽  
...  
Keyword(s):  
Manganese Oxide ◽  
Resistive Switching ◽  
Hafnium Oxide ◽  
Switching Characteristics

Resistive switching characteristics in manganese oxide and tantalum oxide devices

2016 ◽  
Vol 160 ◽  
pp. 49-53 ◽  
Author(s):  
Quanli Hu ◽  
Yawar Abbas ◽  
Haider Abbas ◽  
Mi Ra Park ◽  
Tae-Sik Yoon ◽  
...  
Keyword(s):  
Manganese Oxide ◽  
Resistive Switching ◽  
Tantalum Oxide ◽  
Switching Characteristics

Nonvolatile resistive switching characteristics of HfO2 with Cu doping

2008 ◽  
Vol 1071 ◽  
Author(s):  
Weihua Guan ◽  
Shibing Long ◽  
Ming Liu ◽  
Wei Wang
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Nonvolatile Memory ◽  
Metal Electrode ◽  
Electron Beam Evaporation ◽  
Switching Behavior ◽  
Cu Doping ◽  
Low Resistance ◽  
Switching Characteristics ◽  
Memory Applications

AbstractIn this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is less than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

ACS Nano ◽  
2014 ◽  
Vol 8 (10) ◽  
pp. 10262-10269 ◽  
Author(s):  
Sungho Kim ◽  
ShinHyun Choi ◽  
Jihang Lee ◽  
Wei D. Lu
Keyword(s):  
Resistive Switching ◽  
Tantalum Oxide ◽  
Si Doping ◽  
Switching Characteristics

Resistive Switching Characteristics of Tantalum Oxide and Titanium Oxide Heterojunction Devices

2017 ◽  
Vol 17 (10) ◽  
pp. 7150-7154 ◽  
Author(s):  
Haider Abbas ◽  
Yawar Abbas ◽  
Mi Ra Park ◽  
Quanli Hu ◽  
Tae Sung Lee ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Resistive Switching ◽  
Tantalum Oxide ◽  
Heterojunction Devices ◽  
Switching Characteristics
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