heterojunction devices
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2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sirri Batuhan Kalkan ◽  
Emad Najafidehaghani ◽  
Ziyang Gan ◽  
Fabian Alexander Christian Apfelbeck ◽  
Uwe Hübner ◽  
...  

AbstractOrganic semiconductors (OSC) are widely used for consumer electronic products owing to their attractive properties such as flexibility and low production cost. Atomically thin transition metal dichalcogenides (TMDs) are another class of emerging materials with superior electronic and optical properties. Integrating them into van der Waals (vdW) heterostructures provides an opportunity to harness the advantages of both material systems. However, building such heterojunctions by conventional physical vapor deposition (PVD) of OSCs is challenging, since the growth is disrupted due to limited diffusion of the molecules on the TMD surface. Here we report wafer-scale (3-inch) fabrication of transferable OSC nanosheets with thickness down to 15 nm, which enable the realization of heterojunction devices. By controlled dissolution of a poly(acrylic acid) film, on which the OSC films were grown by PVD, they can be released and transferred onto arbitrary substrates. OSC crystal quality and optical anisotropy are preserved during the transfer process. By transferring OSC nanosheets (p-type) onto prefabricated electrodes and TMD monolayers (n-type), we fabricate and characterize various electronic devices including unipolar, ambipolar and antiambipolar field-effect transistors. Such vdW p-n heterojunction devices open up a wide range of possible applications ranging from ultrafast photodetectors to conformal electronics.


Optik ◽  
2021 ◽  
Vol 231 ◽  
pp. 166426
Author(s):  
A.A.M. Farag ◽  
Nadia A.A. Elkanzi ◽  
A.H. Ammar ◽  
N. Roushdy

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Weifan Cai ◽  
Jingyuan Wang ◽  
Yongmin He ◽  
Sheng Liu ◽  
Qihua Xiong ◽  
...  

AbstractSemiconducting piezoelectric α-In2Se3 and 3R MoS2 have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In2Se3 and 3R MoS2 flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In2Se3/3R MoS2 vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 103 A W−1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of − 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In2Se3/3R MoS2 photoelectric response through an appropriate mechanical stimulus.


2021 ◽  
Vol 184 ◽  
pp. 108808
Author(s):  
Sopan M. Wagalgave ◽  
Sheshanath V. Bhosale ◽  
Avinash L. Puyad ◽  
Jing-Yu Chen ◽  
Lathe Jones ◽  
...  

ACS Sensors ◽  
2020 ◽  
Vol 5 (6) ◽  
pp. 1849-1857 ◽  
Author(s):  
Seydou Ouedraogo ◽  
Rita Meunier-Prest ◽  
Abhishek Kumar ◽  
Mabinty Bayo-Bangoura ◽  
Marcel Bouvet

2020 ◽  
Vol 3 (6) ◽  
pp. 5045-5052 ◽  
Author(s):  
Shubham Ranjan ◽  
Bai Sun ◽  
Guangdong Zhou ◽  
Yimin A. Wu ◽  
Lan Wei ◽  
...  

2020 ◽  
Vol MA2020-01 (52) ◽  
pp. 2896-2896
Author(s):  
Shraddha Dhanraj Nehate ◽  
Ashwin Kumar Saikumar ◽  
Kalpathy B. Sundaram

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