Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity

Microelectronic Engineering ◽

10.1016/j.mee.2016.06.017 ◽

2016 ◽

Vol 163 ◽

pp. 115-118

Author(s):

Jiao Wen ◽

Qiang Liu ◽

Chang Liu ◽

Yize Wang ◽

Bo Zhang ◽

...

Keyword(s):

Quantum Well ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Sensitivity ◽

Effect Transistor

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High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

Applied Physics Letters ◽

10.1063/1.4967999 ◽

2016 ◽

Vol 109 (20) ◽

pp. 203504 ◽

Author(s):

M. Syamsul ◽

Y. Kitabayashi ◽

D. Matsumura ◽

T. Saito ◽

Y. Shintani ◽

...

Keyword(s):

High Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

High Voltage Breakdown ◽

Effect Transistor ◽

Voltage Breakdown

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Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

IEEE Electron Device Letters ◽

10.1109/led.2017.2774290 ◽

2018 ◽

Vol 39 (1) ◽

pp. 51-54 ◽

Author(s):

Mohd Syamsul ◽

Nobutaka Oi ◽

Satoshi Okubo ◽

Taisuke Kageura ◽

Hiroshi Kawarada

Keyword(s):

High Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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High-voltage junction-gate field-effect transistor with recessed gates

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1982.20915 ◽

1982 ◽

Vol 29 (10) ◽

pp. 1560-1570 ◽

Author(s):

B.J. Baliga

Keyword(s):

High Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

Applied Physics Express ◽

10.1143/apex.5.064002 ◽

2012 ◽

Vol 5 (6) ◽

pp. 064002 ◽

Author(s):

Jianqiang Lin ◽

Tae-Woo Kim ◽

Dimitri A. Antoniadis ◽

Jesús A. del Alamo

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Front End ◽

Effect Transistor ◽

Lift Off ◽

Ingaas Quantum Well

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A In0.53Ga0.47As-In0.52Al0.48As single quantum well field-effect transistor

IEEE Electron Device Letters ◽

10.1109/edl.1985.26260 ◽

1985 ◽

Vol 6 (12) ◽

pp. 642-644 ◽

Author(s):

K.S. Seo ◽

P.K. Bhattacharya ◽

Y. Nashimoto

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Single Quantum ◽

Single Quantum Well ◽

Effect Transistor

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Refine treatment of plasmon mediated photoconductivity resonances in a grid-gated double-quantum-well field-effect transistor

The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) ◽

10.1109/msmw.2004.1345963 ◽

2004 ◽

Author(s):

V.V. Popov ◽

T.V. Teperik ◽

Yu.N. Zayko ◽

S.J. Allen ◽

N.J.M. Horing

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Double Quantum ◽

Double Quantum Well ◽

Effect Transistor

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Cyclotron resonance in asymmetric modulation-doped field-effect transistor heterostructures using In[sub x]Ga[sub 1−x]As quantum well and InAs–GaAs superlattice channels

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589357 ◽

1997 ◽

Vol 15 (5) ◽

pp. 1697 ◽

Author(s):

L. A. Cury

Keyword(s):

Quantum Well ◽

Cyclotron Resonance ◽

Field Effect ◽

Field Effect Transistor ◽

Asymmetric Modulation ◽

Effect Transistor

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A tunnel field-effect transistor with a graphene derivatives (COH) n -(CF) n -(CH) n three-layer quantum well with the middle (CF) n drain layer

Russian Microelectronics ◽

10.1134/s1063739714060109 ◽

2015 ◽

Vol 44 (2) ◽

pp. 89-100

Author(s):

V. A. Zhukov ◽

V. G. Maslov

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Graphene Derivatives ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1599051 ◽

2003 ◽

Vol 94 (5) ◽

pp. 3556-3562 ◽

Author(s):

V. V. Popov ◽

O. V. Polischuk ◽

T. V. Teperik ◽

X. G. Peralta ◽

S. J. Allen ◽

...

Keyword(s):

Quantum Well ◽

Terahertz Radiation ◽

Field Effect ◽

Field Effect Transistor ◽

Double Quantum ◽

Double Quantum Well ◽

Effect Transistor ◽

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Monte Carlo particle simulation of a quantum well heterojunction field‐effect transistor: Comparison with experimental data

Journal of Applied Physics ◽

10.1063/1.363020 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1499-1503 ◽

Author(s):

C. Moglestue

Keyword(s):

Experimental Data ◽

Monte Carlo ◽

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Particle Simulation ◽

Effect Transistor ◽

Comparison With Experimental Data ◽

Monte Carlo Particle Simulation

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