A In0.53Ga0.47As-In0.52Al0.48As single quantum well field-effect transistor
1985 ◽
Vol 6
(12)
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pp. 642-644
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2006 ◽
Vol 21
(10)
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pp. 1408-1411
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2002 ◽
Vol 12
(03)
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pp. 925-937
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