An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique

2022 ◽  
pp. 105366
Author(s):  
Lin Cheng ◽  
Hongliang Lu ◽  
Minjie Xia ◽  
Wei Cheng ◽  
Yuming Zhang ◽  
...  
Keyword(s):  
Parameter Extraction ◽  
Extraction Technique ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model

A Novel Parameter Extraction Technique of Microwave Small-Signal Model for Nanometer MOSFETS

2019 ◽  
Vol 29 (11) ◽  
pp. 710-713
Author(s):  
Yang Cao ◽  
Wei Zhang ◽  
Jun Fu ◽  
Quan Wang ◽  
Linlin Liu ◽  
...  
Keyword(s):  
Parameter Extraction ◽  
Extraction Technique ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model

A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model

2005 ◽  
Vol 10 (2) ◽  
pp. 405-409
Author(s):  
Shi Xin-zhi ◽  
Liu Hai-wen ◽  
Sun Xiao-wei ◽  
Che Yan-feng ◽  
Cheng Zhi-qun ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Bipolar Transistors ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model

scholarly journals EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling

2018 ◽  
Vol 10 (5-6) ◽  
pp. 700-708 ◽  
Author(s):  
Tom K. Johansen ◽  
Ralf Doerner ◽  
Nils Weimann ◽  
Maruf Hossain ◽  
Viktor Krozer ◽  
...  
Keyword(s):  
Extraction Procedure ◽  
Three Dimensional ◽  
Parameter Extraction ◽  
Calibration Procedure ◽  
Small Signal ◽  
Signal Model ◽  
Active Device ◽  
Signal Prediction ◽  
Small Signal Model ◽  
Em Simulation

AbstractIn this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.

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