Design of Differential LNA and Double Balanced Mixer using 180 nm CMOS Technology

2019 ◽  
Vol 71 ◽  
pp. 102850 ◽  
Author(s):  
C. Kalamani
Keyword(s):  
Cmos Technology ◽  
Balanced Mixer

Design of resistive double-balanced mixer in 0.18-μm CMOS technology with low-power bulk-injection technique for 5.8-GHz DSRC applications

2014 ◽  
Vol 56 (5) ◽  
pp. 1248-1251
Author(s):  
Chien-Chang Huang ◽  
George Changlin Guu ◽  
Chia-Kai Chen ◽  
Chih-Wen Huang
Keyword(s):  
Low Power ◽  
Cmos Technology ◽  
Injection Technique ◽  
Balanced Mixer

K-band single balanced mixer for ultra-wideband radar in 0.18-μm CMOS technology

2007 ◽  
Vol 49 (11) ◽  
pp. 2697-2700 ◽  
Author(s):  
Han-Yeol Yu ◽  
Sung-Sun Choi ◽  
Sung-Hyun Kim ◽  
Yong-Hoon Kim
Keyword(s):  
Cmos Technology ◽  
Ultra Wideband ◽  
Wideband Radar ◽  
Balanced Mixer ◽  
K Band

scholarly journals A Single-Stage Low-Power Double-Balanced Mixer Merged with LNA and VCO

2017 ◽  
Vol 7 (1) ◽  
pp. 152 ◽  
Author(s):  
Nam-Jin Oh
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Supply Voltage ◽  
Intermediate Frequency ◽  
Cmos Technology ◽  
Single Stage ◽  
Voltage Controlled Oscillator ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Balanced Mixer

This paper proposes three types of single stage low-power RF front-end, called double-balanced LMVs, by merging LNA, mixer, and voltage-controlled oscillator (VCO) exploiting a series <em>LC </em>(SLC) network. The low intermediate frequency (IF) or baseband signal can be directly sensed at the drain nodes of the VCO switching transistors by adding a simple resistor-capacitor (<em>RC</em>) low-pass filter (LPF). By adopting a double-balanced mixer topology, the strong leakage of the local oscillator (LO) at the IF output is effectively suppressed. Using a 65 nm CMOS technology, the proposed double-balanced LMVs (DB-LMVs) are designed. Oscillating at around 2.4 GHz ISM band, the phase noise of the proposed three DB-LMVs is −111 dBc/Hz at 1 MHz offset frequency. The simulated voltage conversion gain is larger than 36 dB and the double-side band (DSB) noise figure (NF) is less than 7.7 dB. The DB-LMVs consume only 0.2 mW <em>dc</em> power from 1-V supply voltage.

CMOS TECHNOLOGY FOR CCD VIDEO MEMORIES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-41-C4-44
Author(s):  
G. J.T. DAVIDS ◽  
P. B. HARTOG ◽  
J. W. SLOTBOOM ◽  
G. STREUTKER ◽  
A. G. van der SIJDE ◽  
...  
Keyword(s):  
Cmos Technology

CMOS-TECHNOLOGY - STATUS, TRENDS AND APPLICATIONS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-13-C4-22
Author(s):  
F. NEPPL ◽  
H.-J. PFLEIDERER
Keyword(s):  
Cmos Technology

CMOS TECHNOLOGY USING PLASMA NITRIDED OXIDE AS A GATE DIELECTRIC

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-421-C4-424 ◽  
Author(s):  
A. STRABONI ◽  
M. BERENGUER ◽  
B. VUILLERMOZ ◽  
P. DEBENEST ◽  
A. VERNA ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology
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