ABSTRACT4-Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.
ABSTRACTMesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4-(Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt 2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.
Synthesis, Characterizations, and Applications of Metal-Ions Incorporated High Quality MCM-41 Catalysts