Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

2004 ◽  
Vol 44 (2) ◽  
pp. 207-212 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Gerald Lucovsky
Keyword(s):  
Gate Dielectric ◽  
Constant Voltage ◽  
Mos Devices ◽  
Voltage Stress

Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks

2002 ◽  
Vol 91 (12) ◽  
pp. 10127 ◽  
Author(s):  
Zhen Xu ◽  
Michel Houssa ◽  
Richard Carter ◽  
Mohamed Naili ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Constant Voltage ◽  
Voltage Stress

Nitrided Gate Dielectrics and Charge-to-Breakdown Test

1996 ◽  
Vol 429 ◽  
Author(s):  
S. Dimitrijev ◽  
P. Tanner ◽  
H. B. Harrison ◽  
D. Sweatman
Keyword(s):  
Stress Field ◽  
Silicon Dioxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Time Dependent ◽  
Dielectric Films ◽  
Charge Accumulation ◽  
Constant Voltage ◽  
Voltage Stress

AbstractIn this paper, the applicability of the charge-to-breakdown test for characterisation and comparison of differently grown ultra-thin gate dielectric films is considered. It is shown that the charge-to-breakdown parameter cannot be reliably used, because it is related to the electrons tunneling through the film, and not to the mechanism of positive charge accumulation which leads to time-dependent breakdown. It is found that the constant-voltage stress provides a consistent set of stress field vs time-to-breakdown data. Nitrided gate dielectrics show improved breakdown characteristics, compared to standard silicon-dioxide films.

“Smart” TDDB algorithm for investigating degradation in high-κ gate dielectric stacks under constant voltage stress

2009 ◽  
Vol 86 (3) ◽  
pp. 287-290 ◽  
Author(s):  
Chadwin D. Young ◽  
Gennadi Bersuker ◽  
Joey Tun ◽  
Rino Choi ◽  
Dawei Heh ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Constant Voltage ◽  
Voltage Stress

Impact of Constant Voltage Stress on High-κ Gate Dielectric for RF IC Performance

2019 ◽  
Vol 41 (3) ◽  
pp. 415-419
Author(s):  
Peter Paliwoda ◽  
Durga Misra
Keyword(s):  
Gate Dielectric ◽  
Constant Voltage ◽  
Voltage Stress ◽  
Rf Ic

Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High-$\kappa$ Gated MOS Devices

2007 ◽  
Vol 28 (5) ◽  
pp. 432-435 ◽  
Author(s):  
Chun-Yuan Lu ◽  
Kuei-Shu Chang-Liao ◽  
Chun-Chang Lu ◽  
Ping-Hung Tsai ◽  
Tien-Ko Wang
Keyword(s):  
Energy Distribution ◽  
Gate Dielectric ◽  
Trap Density ◽  
Mos Devices

Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1895-1900 ◽  
Author(s):  
Philippe Chiquet ◽  
Pascal Masson ◽  
Romain Laffont ◽  
Gilles Micolau ◽  
Jérémy Postel-Pellerin ◽  
...  
Keyword(s):  
Dynamic Measurement ◽  
Constant Voltage ◽  
Voltage Stress
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