ABSTRACTSi samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.
On the Origin of the OER Activity of Ultrathin Manganese Oxide Films
