Effects of Ion Implantation Doping on the Formation of Titanium Silicide on the Diffusion Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Matsui ◽  
H. Ohtsuki ◽  
M. Ino ◽  
S. Ushio
Keyword(s):  
Ion Implantation ◽  
Oxide Films ◽  
Titanium Silicide ◽  
Si Substrate ◽  
Surface Layers ◽  
Critical Dose ◽  
Diffusion Layers

ABSTRACTSi samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.

scholarly journals Effect of Irradiation with Si+ Ions on Phase Transformations in Ti–Al System during Thermal Annealing

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 205
Author(s):  
Zhuldyz Sagdoldina ◽  
Bauyrzhan Rakhadilov ◽  
Sherzod Kurbanbekov ◽  
Rauan Kozhanova ◽  
Aidar Kengesbekov
Keyword(s):  
Ion Implantation ◽  
Crystal Lattice ◽  
Phase Transformations ◽  
Thermal Annealing ◽  
Aluminum Film ◽  
Titanium Silicide ◽  
Surface Layers ◽  
Near Surface ◽  
Before And After ◽  
Increasing Temperature

The article deals with the effect of irradiation with Si+ ions on phase transformations in the Ti–Al system during thermal annealing. An aluminum film with a thickness of 500 nm was deposited on VT1-00 titanium samples by magnetron sputtering, followed by ion implantation. Samples before and after irradiation with Si ions were annealed in a vacuum of 10−4 Pa in the temperature range 600–1000 °C. It was established that ion implantation reduces the dissolution of Al in α-Ti with the formation of titanium silicides (TiSi2, Ti5Si3) and stabilizes aluminide phases Ti3Al rich in aluminum. As a result, a composite structure based on titanium silicide/aluminide was obtained on the surface of the sample synthesized by complex treatment: deposition, irradiation with Si+, and thermal annealing at the near-surface layers. The formation of the phase-structural state of the implanted layers is associated with the displacement of atoms of the crystal lattice, a result that is reflected in an increase in the size of the crystal lattice and a decrease in microdistortion of the lattice. The opposite effect is observed with increasing temperature. This fact is explained by the relaxation of unstable large grains with an excess of internal energies. At the annealing temperature of 900–1000 °C, a significant increase in microhardness was observed due to silicide phases.

The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

2021 ◽  
Vol 47 (2) ◽  
pp. 189-192
Author(s):  
A. V. Voitsekhovskii ◽  
S. N. Nesmelov ◽  
S. M. Dzyadukh ◽  
V. S. Varavin ◽  
S. A. Dvoretskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Surface Layers ◽  
Near Surface

Direct graphene synthesis on SiO2/Si substrate by ion implantation

2013 ◽  
Vol 102 (19) ◽  
pp. 193102 ◽  
Author(s):  
R. Zhang ◽  
Z. S. Wang ◽  
Z. D. Zhang ◽  
Z. G. Dai ◽  
L. L. Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Graphene Synthesis

Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate

2018 ◽  
Vol 113 (18) ◽  
pp. 182103 ◽  
Author(s):  
A. A. Nikolskaya ◽  
D. S. Korolev ◽  
A. N. Mikhaylov ◽  
A. I. Belov ◽  
A. A. Sushkov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Light Emitting

scholarly journals Structural Evolution of Near-Surface Layers in NiTi Alloy Caused by an Ion Implantation

2011 ◽  
Vol 120 (1) ◽  
pp. 75-78 ◽  
Author(s):  
Z. Swiatek ◽  
M. Michalec ◽  
N. Levintant-Zayonts ◽  
J. Bonarski ◽  
A. Budziak ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Niti Alloy ◽  
Structural Evolution ◽  
Surface Layers ◽  
Near Surface

scholarly journals Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
L. L. Meisner ◽  
A. I. Lotkov ◽  
V. A. Matveeva ◽  
L. V. Artemieva ◽  
S. N. Meisner ◽  
...  
Keyword(s):  
Stem Cells ◽  
Flow Cytometry ◽  
Mesenchymal Stem Cells ◽  
Ion Implantation ◽  
Cell Counting ◽  
High Dose ◽  
Surface Layers ◽  
Test Flow ◽  
Ion Implanted

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

Dislocation structure in near-surface layers of pure metals formed by ion implantation

1989 ◽  
Vol 115 ◽  
pp. 337-341 ◽  
Author(s):  
A.N Didenko ◽  
A.I Rjabchikov ◽  
G.P Isaev ◽  
N.M Arzubov ◽  
Yu.P Sharkeev ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dislocation Structure ◽  
Surface Layers ◽  
Near Surface ◽  
Pure Metals

Characterization of Crystallinity of SiC Surface Layers Produced by Ion Implantation

2000 ◽  
Vol 182 (2) ◽  
pp. 653-660 ◽  
Author(s):  
E. Theodossiu ◽  
H. Baumann ◽  
M. Klimenkov ◽  
W. Matz ◽  
K. Bethge
Keyword(s):  
Ion Implantation ◽  
Surface Layers
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