High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy

2018 ◽  
Vol 88-90 ◽  
pp. 242-245 ◽  
Author(s):  
Y. Yamagishi ◽  
Y. Cho
2018 ◽  
Author(s):  
Yuji Yamagishi ◽  
Yasuo Cho

Abstract High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.


2012 ◽  
Vol 39 (8) ◽  
pp. 0808003
Author(s):  
张俊 Zhang Jun ◽  
杨勇 Yang Yong ◽  
程学武 Cheng Xuewu ◽  
杨尚斌 Yang Shangbin ◽  
龚威 Gong Wei

1992 ◽  
Author(s):  
W. B. Sparks ◽  
F. Macchetto ◽  
N. J. Jackson ◽  
G. K. Miley

2007 ◽  
pp. 1621-1624
Author(s):  
Hiroshi Kawasaki ◽  
Somei Ohnuki ◽  
Takanori Suda ◽  
Naoyuki Hashimoto ◽  
Yoshitsugu Kojima

1981 ◽  
Vol 8 (1) ◽  
pp. 111-112 ◽  
Author(s):  
Samuel T. Durrance ◽  
Robert R. Conway ◽  
Charles A. Barth ◽  
A. L. Lane

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