High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy
2018 ◽
Vol 88-90
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pp. 242-245
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2018 ◽
2008 ◽
pp. 49-114
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Keyword(s):
Keyword(s):
1992 ◽
1981 ◽
Vol 8
(1)
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pp. 111-112
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