High Resolution Mapping of Subsurface Defects at SiO2/SiC Interfaces by Time-Resolved Scanning Nonlinear Dielectric Microscopy
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Abstract High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.
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2018 ◽
Vol 88-90
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pp. 242-245
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2019 ◽
Vol 5
(7)
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pp. 351-353
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