scholarly journals Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization

2020 ◽  
Vol 6 ◽  
pp. 100040
Author(s):  
F. Triendl ◽  
G. Pfusterschmied ◽  
C. Zellner ◽  
W. Artner ◽  
K. Hradil ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors

2004 ◽  
Vol 7 (4-6) ◽  
pp. 419-422 ◽  
Author(s):  
Bahman Hekmatshoar ◽  
Arash Khajooeizadeh ◽  
Shams Mohajerzadeh ◽  
Davood Shahrjerdi ◽  
Ebrahim Asl-Soleimani
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

scholarly journals Low Temperature Nickel Induced Crystallization of Amorphous Silicon Nanorods on Silicon and Glass Substrates

2020 ◽  
Vol 2 (2) ◽  
pp. 164-169
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Amorphous Silicon ◽  
Low Cost ◽  
Nanorod Arrays ◽  
Simple Method ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
3D Integrated Circuits ◽  
Induced Crystallization

In this work, crystallization of amorphous silicon (a-Si) nanorods was done by metal induced crystallization (MIC) method at low temperature (500oC) suitable for circuit applications and low cost, disposable biosensors. The crystallization of a-Si nanorods was investigated by Raman and TEM methods. These data showed oriented crystallized Si nanorods have been obtained by metal induced crystallization (MIC) method on different substrates, which can be suitable for 3D integrated circuits, optical and electrochemical applications. This simple method can be used to produce silicon nanorod arrays with high quality suitable for nanoelectronic and optoelectronic applications.

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