RETRACTED: Structural, optical, and electrical properties of Schottky diodes based on undoped and cobalt-doped ZnO nanorods prepared by RF-magnetron sputtering

2013 ◽  
Vol 178 (16) ◽  
pp. 1048-1056 ◽  
Author(s):  
Husam S. Al-Salman ◽  
M.J. Abdullah
2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.


2021 ◽  
Vol MA2021-01 (33) ◽  
pp. 1083-1083
Author(s):  
Alexei N. Nazarov ◽  
Andriy V Vasin ◽  
Andriy V. Rusavsky ◽  
Yuri V. Gomeniuk ◽  
Igor P. Tyagulskii ◽  
...  

Vacuum ◽  
2002 ◽  
Vol 66 (3-4) ◽  
pp. 501-504 ◽  
Author(s):  
T Suzuki ◽  
Y Abe ◽  
M Kawamura ◽  
K Sasaki ◽  
T Shouzu ◽  
...  

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