Crystallization and ablation in annealing of amorphous-Si thin film on glass and crystalline-Si substrates irradiated by third harmonics of Nd3+:YAG laser

2008 ◽  
Vol 11 (4) ◽  
pp. 107-116 ◽  
Author(s):  
I.A. Palani ◽  
Nilesh J. Vasa ◽  
M. Singaperumal
2011 ◽  
Vol 58 (5) ◽  
pp. 1433-1439 ◽  
Author(s):  
Shih-Yung Lo ◽  
Dong-Sing Wuu ◽  
Chia-Hao Chang ◽  
Chao-Chun Wang ◽  
Shui-Yang Lien ◽  
...  

1994 ◽  
Vol 343 ◽  
Author(s):  
Julie A. Tsai ◽  
Andrew J. Tang ◽  
Rafael Reif

ABSTRACTPolycrystalline-Si1−xGex films have been formed by various methods on oxide-coated Si substrates at temperatures ≤600°C. Compared to thermal growth, plasma deposition of poly-Si1−xGex promotes smoother films with smaller grains having a {200}-dominated texture. Poly-Si1−xGex Alms formed by plasma deposition of amorphous-Si1-xGex followed by a crystallization anneal have an even smoother surface with grain sizes enhanced by an order of magnitude and a weak {111} grain texture. Hydrogen incorporated in amorphous-Si1−xGex evolves completely during crystallization without disrupting the smooth surface morphology. The largest grain sizes (∶1.3μm) are achieved in poly-Si1−xGex films formed by Si+ ion implantation for amorphization with a subsequent recrystallization anneal.


2018 ◽  
Vol 5 (11) ◽  
pp. 22759-22763 ◽  
Author(s):  
Aliya Mukanova ◽  
Arailym Nurpeissova ◽  
Assem Zharbossyn ◽  
Sung-Soo Kim ◽  
Maksym Myronov ◽  
...  

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5615-5618 ◽  
Author(s):  
Yongjing Lin ◽  
Corsin Battaglia ◽  
Mathieu Boccard ◽  
Mark Hettick ◽  
Zhibin Yu ◽  
...  

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