Amorphous Si Thin Film Based Photocathodes with High Photovoltage for Efficient Hydrogen Production

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5615-5618 ◽  
Author(s):  
Yongjing Lin ◽  
Corsin Battaglia ◽  
Mathieu Boccard ◽  
Mark Hettick ◽  
Zhibin Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Production ◽  
Amorphous Si ◽  
Si Thin Film

Fabrication of Flexible Amorphous-Si Thin-Film Solar Cells on a Parylene Template Using a Direct Separation Process

2011 ◽  
Vol 58 (5) ◽  
pp. 1433-1439 ◽  
Author(s):  
Shih-Yung Lo ◽  
Dong-Sing Wuu ◽  
Chia-Hao Chang ◽  
Chao-Chun Wang ◽  
Shui-Yang Lien ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Separation Process ◽  
Thin Film Solar Cells ◽  
Direct Separation ◽  
Amorphous Si ◽  
Si Thin Film

N-type doped amorphous Si thin film on a surface of rough current collector as anode for Li-ion batteries

2018 ◽  
Vol 5 (11) ◽  
pp. 22759-22763 ◽  
Author(s):  
Aliya Mukanova ◽  
Arailym Nurpeissova ◽  
Assem Zharbossyn ◽  
Sung-Soo Kim ◽  
Maksym Myronov ◽  
...  
Keyword(s):  
Thin Film ◽  
Current Collector ◽  
Li Ion Batteries ◽  
Li Ion ◽  
Amorphous Si ◽  
Si Thin Film

Application of Self-Aligned Amorphous SI Thin-Film Transistors

1999 ◽  
Vol 557 ◽  
Author(s):  
J.P. Lu ◽  
P. Mei ◽  
C. Chua ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
New Technology ◽  
Channel Length ◽  
Shift Register ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Si ◽  
Si Thin Film ◽  
Dynamic Shift

AbstractWe have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.

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