Nanocrystalline Bi2S3 thin films grown by thio-glycolic acid mediated successive ionic layer adsorption and reaction (SILAR) technique

2013 ◽  
Vol 16 (1) ◽  
pp. 43-50 ◽  
Author(s):  
K. Mageshwari ◽  
R. Sathyamoorthy
Keyword(s):  
Thin Films ◽  
Glycolic Acid ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

Growth of strongly orientated lead sulfide thin films by successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (2) ◽  
pp. 161-164 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

CdS-PbS Multilayer Thin Films Grown by the SILAR Method

2004 ◽  
Vol 99-100 ◽  
pp. 243-246 ◽  
Author(s):  
S. Lindroos ◽  
J. Puišo ◽  
Sigitas Tamulevičius ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Normal Pressure ◽  
Multilayer Thin Films ◽  
Silar Method ◽  
Layer Structures ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (6) ◽  
pp. 983-986 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markka Leskelä
Keyword(s):  
Thin Films ◽  
Lead Selenide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

scholarly journals Influence of the Substrate, Process Conditions, and Postannealing Temperature on the Properties of ZnO Thin Films Grown by the Successive Ionic Layer Adsorption and Reaction Method

ACS Omega ◽  
2021 ◽  
Vol 6 (4) ◽  
pp. 2665-2674
Author(s):  
Bijoy Chandra Ghos ◽  
Syed Farid Uddin Farhad ◽  
Md Abdul Majed Patwary ◽  
Shanta Majumder ◽  
Md. Alauddin Hossain ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Process Conditions ◽  
Reaction Method ◽  
Layer Adsorption ◽  
Ionic Layer

Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications

2020 ◽  
Vol 217 (15) ◽  
pp. 2000002
Author(s):  
Tejasvinee S. Bhat ◽  
Sawanta S. Mali ◽  
Jyoti V. Patil ◽  
Shirish T. Killedar ◽  
Trishala R. Desai ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Method ◽  
Layer Adsorption ◽  
Optoelectronic Applications ◽  
Cadmium Sulfoselenide ◽  
Ionic Layer

Preparation of Cu2ZnSnS4 Thin Films by Successive Ionic Layer Adsorption and Reaction (SILAR) Method for Supercapacitor Applications

2020 ◽  
Vol 20 (10) ◽  
pp. 6235-6244 ◽  
Author(s):  
A. Murugan ◽  
V. Siva ◽  
A. Shameem ◽  
S. Asath Bahadur
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Electrochemical Impedance ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Layer Adsorption ◽  
Diffraction Patterns ◽  
Czts Thin Films ◽  
Supercapacitor Applications ◽  
Ionic Layer

The Cu2ZnSnS4 (CZTS) thin films have been prepared at different deposition cycles, deposited on a glass substrate by successive ionic layer adsorption and reaction (SILAR) method followed by the annealing process at elevated temperature. The investigations on the films have been carried out to understand and confirm its structure, functional group present, crystalline morphology, optical and electrochemical behavior. The powder X-ray diffraction patterns recorded indicate that the deposited films are formed in the tetragonal structure. Other parameters like grain size, dislocation density, and microstrain are also calculated. The uniform surface of the films with spherical shaped morphology has been observed by Scanning Electron Microscopy, and the elemental compositions have been confirmed by EDAX. Electrochemical behavior such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge analysis have been carried out by electrochemical workstation. The modified electrode exhibits maximum specific capacitance value as 416 F/g for a pure sample. Optical studies have shown that the band gaps are estimated between 1.40 eV and 1.57 eV.

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