Effects of Cu incorporation on physical properties of ZnTe thin films deposited by thermal evaporation

2014 ◽  
Vol 19 ◽  
pp. 17-23 ◽  
Author(s):  
Qeemat Gul ◽  
M. Zakria ◽  
Taj Muhammad Khan ◽  
Arshad Mahmood ◽  
Amjid Iqbal
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Thermal Evaporation ◽  
Znte Thin Films

Physical properties of Cd1−xZnxS thin films prepared by thermal evaporation of the solid solution

1980 ◽  
Vol 59 (1) ◽  
pp. 201-210 ◽  
Author(s):  
P. Domens ◽  
M. Cadene ◽  
G. W. Cohen Solal ◽  
S. Martinuzzi ◽  
C. Brouty
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Physical Properties ◽  
Thermal Evaporation

scholarly journals Classical Size Effects in Sb Doped SnTe Thin Films

2017 ◽  
Vol 18 (1) ◽  
pp. 75-77
Author(s):  
Ya.P. Saliy
Keyword(s):  
Thin Films ◽  
Size Effect ◽  
Physical Properties ◽  
Free Path ◽  
Size Effects ◽  
Carrier Mobility ◽  
Thermal Evaporation ◽  
P Type ◽  
Strongly Degenerate ◽  
Classical Size

The possibility of obtaining strongly degenerate (> 4×1020 сm-3) SnTe thin films (d = 200 - 2000 nm) with p-type conductivity by thermal evaporation in vacuum of SnTe crystals doped with Sb, with subsequent condensation onto as (0001) mica and sytal substrates, was established. The thickness dependences of electro-physical properties of thin films were obtained. In this region of thickness there was growth of the carrier mobility with thickness, which is attributable to manifestation of classical size effect and interpreted in the framework of Fuchs-Sondheimer theory. These measurements show little correlation between the length of free path of charge cattiers and the lateral diameter of surface objects.

Effects of metal doping on the physical properties of ZnTe thin films

2014 ◽  
Vol 14 (3) ◽  
pp. 282-286 ◽  
Author(s):  
Waqar Mahmood ◽  
Nazar Abbas Shah
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Metal Doping ◽  
Znte Thin Films

Influence of Deposition Temperature of ZnTe Films on Silicon by Thermal Evaporation

2013 ◽  
Vol 690-693 ◽  
pp. 569-572
Author(s):  
Jenn Sen Lin ◽  
Shih Syun Wei ◽  
Yi Ting Yu ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Light Emitting Diodes ◽  
Thermal Evaporation ◽  
Light Emitting ◽  
Znte Thin Films

The microstructure and electrical properties of ZnTe films were investigated by using thermal evaporation with emphasis on the effects of a deposition temperature. Microstructure, crystallinity, carrier concentration, resistivity, and mobility are shown to be dependent on the deposition temperature. The highest carrier concentration of 9.1×1014 cm-3, the lowest resistivity of 9.9 Ω-cm and the largest mobility of 667 cm2V-1S-1 are presented at a deposition temperature of 580oC, respectively. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes.

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