scholarly journals Classical Size Effects in Sb Doped SnTe Thin Films

2017 ◽  
Vol 18 (1) ◽  
pp. 75-77
Author(s):  
Ya.P. Saliy
Keyword(s):  
Thin Films ◽  
Size Effect ◽  
Physical Properties ◽  
Free Path ◽  
Size Effects ◽  
Carrier Mobility ◽  
Thermal Evaporation ◽  
P Type ◽  
Strongly Degenerate ◽  
Classical Size

The possibility of obtaining strongly degenerate (> 4×1020 сm-3) SnTe thin films (d = 200 - 2000 nm) with p-type conductivity by thermal evaporation in vacuum of SnTe crystals doped with Sb, with subsequent condensation onto as (0001) mica and sytal substrates, was established. The thickness dependences of electro-physical properties of thin films were obtained. In this region of thickness there was growth of the carrier mobility with thickness, which is attributable to manifestation of classical size effect and interpreted in the framework of Fuchs-Sondheimer theory. These measurements show little correlation between the length of free path of charge cattiers and the lateral diameter of surface objects.

p-type conductive NiOx: Cu thin films with high carrier mobility deposited by ion beam assisted deposition

2018 ◽  
Vol 44 (3) ◽  
pp. 3291-3296 ◽  
Author(s):  
Hui Sun ◽  
Sheng-Chi Chen ◽  
Pei-Jie Chen ◽  
Sin-Liang Ou ◽  
Cheng-Yi Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
High Carrier Mobility ◽  
High Carrier ◽  
P Type

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

Physical properties of Cd1−xZnxS thin films prepared by thermal evaporation of the solid solution

1980 ◽  
Vol 59 (1) ◽  
pp. 201-210 ◽  
Author(s):  
P. Domens ◽  
M. Cadene ◽  
G. W. Cohen Solal ◽  
S. Martinuzzi ◽  
C. Brouty
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Physical Properties ◽  
Thermal Evaporation

Size effect on the mechanical properties of microfabricated polysilicon thin films

2001 ◽  
Vol 16 (8) ◽  
pp. 2223-2228 ◽  
Author(s):  
J. N. Ding ◽  
Y. G. Meng ◽  
S. Z. Wen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Size Effect ◽  
Surface Area ◽  
Fracture Strength ◽  
Size Effects ◽  
Microelectromechanical Systems ◽  
Governing Parameter ◽  
Average Value ◽  
Microtensile Test

A new microtensile test device using a magnetic-solenoid force actuator was developed to evaluate the mechanical properties of microfabricated polysilicon thin films that were 100–660 mm long, 20–200 μm wide, and 2.4-μm thick. It was found that the measured average value of Young's modulus, 164 GPa ± 1.2 GPa, falls within the theoretical bounds. The average fracture strength is 1.36 GPa with a standard deviation of 0.14 GPa, and the Weibull modulus is 10.4–11.7. Statistical analysis of the specimen size effects on the tensile strength predicated the size effects on the length, the surface area, and the volume of the specimens. The fracture strength increases with an increase of the ratio of surface area to volume. In such cases, the size effect can be corrected to the ratio of the surface area to volume as the governing parameter. The test data accounts for the uncertainties in mechanical properties and may be used to enhance the reliability and design of polysilicon microelectromechanical systems devices.

The roughness-induced classical size effect in thin films

1993 ◽  
Vol 5 (36) ◽  
pp. 6563-6574 ◽  
Author(s):  
R Lenk ◽  
A Knabchen
Keyword(s):  
Thin Films ◽  
Size Effect ◽  
Classical Size
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