Thickness and annealing evolution to physical properties of e-beam evaporated ZnTe thin films as a rear contact for CdTe solar cells

2021 ◽  
Author(s):  
Deepak Suthar ◽  
Himanshu ◽  
S. L. Patel ◽  
S. Chander ◽  
M. D. Kannan ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Physical Properties ◽  
Cdte Solar Cells ◽  
Znte Thin Films

Deposition Of Znte Thin Films By Close Spaced Sublimation: Structural And Electrical Studies

1997 ◽  
Vol 485 ◽  
Author(s):  
D. J. Goyal ◽  
P. G. Bilurkar ◽  
S. K. Thorat ◽  
N. V. Mate
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Copper Chloride ◽  
Low Cost ◽  
Alcoholic Solution ◽  
Cdte Solar Cells ◽  
Type Semiconductor ◽  
Znte Thin Films

AbstractZinc telluride has the potential of being a low-cost, environmentally stable, lowresistance and easily manufacturable back contact for CdS/CdTe solar cells. Close Spaced Sublimation (CSS) technique is used to deposit thin films of ZnTe. The results are reported in this study.The effects of substrate temperature and film thickness on the structural properties of the deposited thin films are studied. X-ray diffractograms show that all the films prominently exhibit presence of (111) and (200) orientations. However, the degree of the preferred orientation changes as a function of the film thickness. Increase in film thickness reduces the preferential orientation.The as deposited ZnTe thin films, being that of p-type semiconductor, are highly resistive. In order to effectively use these as contact to CdS/CdTe solar cells, they are made more conductive by doping copper. The doping is effected by dipping the films in alcoholic solution of copper chloride, followed by air annealing at 200°C. The resistivity of all the doped films drops drastically in the initial 10 minutes of annealing. The extent of doping is controlled by varying the dipping time.The effects of substrate temperature, film thickness and doping, on the stoichiometry of the films, are studied using Atomic Absorption Spectroscopy (AAS).

Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

2007 ◽  
Vol 515 (15) ◽  
pp. 5819-5823 ◽  
Author(s):  
O. Vigil-Galán ◽  
E. Sánchez-Meza ◽  
C.M. Ruiz ◽  
J. Sastré-Hernández ◽  
A. Morales-Acevedo ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Physical Properties ◽  
Cdte Solar Cells ◽  
Cdte Thin Films

Thermally evaporated CdS thin films for CdS/CdTe solar cells: Effect of substrate temperature on CdS layer

2021 ◽  
Vol 273 ◽  
pp. 115406
Author(s):  
A.A.I. Lakmal ◽  
R.K.K.G.R.G. Kumarasinghe ◽  
V.A. Seneviratne ◽  
Jiann-Yeu Chen ◽  
Jenn-Ming Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Cdte Solar Cells ◽  
Cds Thin Films

scholarly journals C-VCalculations in CdS/CdTe Thin Films Solar Cells with aCdSxTe1-xInterlayer

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
A. Gonzalez-Cisneros ◽  
F. L. Castillo-Alvarado ◽  
J. Ortiz-Lopez ◽  
G. Contreras-Puente
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Solar Cells ◽  
Photovoltaic Cells ◽  
Cdte Film ◽  
Vapor Transport ◽  
Cdte Solar Cells ◽  
Cdte Thin Films ◽  
Cds Film ◽  
Theoretical Results

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compoundCdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimentalC-V(capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.

Incorporation of metal selenide thin films as the secondary absorber in the CdTe solar cells

2020 ◽  
Vol 828 ◽  
pp. 154415 ◽  
Author(s):  
Taowen Wang ◽  
Xiaolong Zhu ◽  
Wei Li ◽  
Jingquan Zhang ◽  
Wenwu Wang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Cdte Solar Cells

scholarly journals The research of post-treatment on Cd1-xMgxTe thin films and CdTe solar cells

2019 ◽  
Vol 556 ◽  
pp. 012011
Author(s):  
Ye Feng ◽  
Mingzhe Yu ◽  
Jian Huang ◽  
Xia Hao ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Post Treatment ◽  
Cdte Solar Cells

Study of the physical properties of CuO thin films grown by modified SILAR method for solar cells applications

2019 ◽  
Vol 127 ◽  
pp. 93-99 ◽  
Author(s):  
Othmane Daoudi ◽  
Youssef Qachaou ◽  
Abderrahim Raidou ◽  
Khalid Nouneh ◽  
Mohammed Lharch ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Physical Properties ◽  
Silar Method

scholarly journals Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3706 ◽  
Author(s):  
Ochai Oklobia ◽  
Giray Kartopu ◽  
Stuart J. C. Irvine
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Open Circuit ◽  
Activation Process ◽  
Back Contact ◽  
Contact Activation ◽  
Doping Density ◽  
Cdte Solar Cells ◽  
Absorber Doping ◽  
P Type

As-doped polycrystalline ZnTe layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated as a back contact for CdTe solar cells. While undoped ZnTe films were essentially insulating, the doped layers showed significant rise in conductivity with increasing As concentration. High p-type carrier densities up 4.5 × 1018 cm−3 was measured by the Hall-effect in heavily doped ZnTe:As films, displaying electrical properties comparable to epitaxial ZnTe single crystalline thin films in the literature. Device incorporation with as-deposited ZnTe:As yielded lower photovoltaic (PV) performance compared to reference devices, due to losses in the open-circuit potential (VOC) and fill factor (FF) related to reducing p-type doping density (NA) in the absorber layer. Some minor recovery observed in absorber doping following a Cl-free post–ZnTe:As deposition anneal in hydrogen at 420 °C contributed to a slight improvement in VOC and NA, highlighting the significance of back contact activation. A mild CdCl2 activation process on the ZnTe:As back contact layer via a sacrificial CdS cap layer has been assessed to suppress Zn losses, which occur in the case of standard CdCl2 anneal treatments (CHT) via formation of volatile ZnCl2. The CdS sacrificial cap was effective in minimising the Zn loss. Compared to untreated and non-capped, mild CHT processed ZnTe:As back contacted devices, mild CHT with a CdS barrier showed the highest recovery in absorber doping and an ~10 mV gain in VOC, with the best cell efficiency approaching the baseline devices.

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