Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

2019 ◽  
Vol 89 ◽  
pp. 26-31 ◽  
Author(s):  
Ç.Ş. Güçlü ◽  
A.F. Özdemir ◽  
A. Karabulut ◽  
A. Kökce ◽  
Ş. Altındal
Keyword(s):  
Schottky Barrier ◽  
Forward Bias ◽  
Negative Capacitance ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes*

2019 ◽  
Vol 36 (5) ◽  
pp. 057101
Author(s):  
Ting-Ting Wang ◽  
Xiao Wang ◽  
Xiao-Bo Li ◽  
Jin-Cheng Zhang ◽  
Jin-Ping Ao
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

2015 ◽  
Vol 650 ◽  
pp. 658-663 ◽  
Author(s):  
Zagarzusem Khurelbaatar ◽  
Min-Sung Kang ◽  
Kyu-Hwan Shim ◽  
Hyung-Joong Yun ◽  
Jouhan Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics
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