Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics
2012 ◽
Vol 513
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pp. 107-111
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2019 ◽
Vol 89
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pp. 26-31
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2015 ◽
Vol 34
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pp. 359-364
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1985 ◽
Vol 77-78
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pp. 397-400
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2020 ◽
Vol 9
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pp. 055004
2015 ◽
Vol 650
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pp. 658-663
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2015 ◽
Vol 67
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pp. 889-895
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Vol 13
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pp. 1137-1142
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