Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors

2010 ◽  
Vol 624 (2) ◽  
pp. 405-409 ◽  
Author(s):  
J. Lange ◽  
J. Becker ◽  
D. Eckstein ◽  
E. Fretwurst ◽  
R. Klanner ◽  
...  
Keyword(s):  
Charge Collection ◽  
Silicon Detectors ◽  
Epitaxial Silicon ◽  
P Type

Employing PEDOT as the p-Type Charge Collection Layer in Regular Organic–Inorganic Perovskite Solar Cells

2015 ◽  
Vol 6 (9) ◽  
pp. 1666-1673 ◽  
Author(s):  
Jiewei Liu ◽  
Sandeep Pathak ◽  
Thomas Stergiopoulos ◽  
Tomas Leijtens ◽  
Konrad Wojciechowski ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Charge Collection ◽  
Inorganic Perovskite ◽  
P Type

Charge-Collection Length Induced by Proton and Alpha Particle Injected Into Silicon Detectors Due to Funneling Effect

2009 ◽  
Vol 56 (1) ◽  
pp. 337-345 ◽  
Author(s):  
Masashi Takada ◽  
Tomoya Nunomiya ◽  
Takeshi Ishikura ◽  
T. Nakamura
Keyword(s):  
Alpha Particle ◽  
Charge Collection ◽  
Silicon Detectors ◽  
Funneling Effect

Measuring Diffusion Lengths in Epitaxial Silicon by Surface Photovoltage

1995 ◽  
Vol 386 ◽  
Author(s):  
John Lowell ◽  
Valerie Wenner ◽  
Damon Debusk
Keyword(s):  
Transition Metals ◽  
Optical Filters ◽  
Surface Photovoltage ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Optical Surface ◽  
Epitaxial Silicon ◽  
Type Silicon ◽  
P Type ◽  
And Diffusion

ABSTRACTIn CMOS, the use of epitaxial layers for prevention of latch-up in logic technologies is well-known and pervasive. One of the crucial parameters is the amount of metallic contamination due to transition metals such as Fe in the epi since this phenomena effects both device performance and quality. However, the ability to measure this parameter on product material is not generally available due to inherent problems with most known methods. The limitation of traditional surface photovoltage is that the deep optical penetration of over a hundred microns is well-beyond the depth of most epitaxial layers and does not accurately profile the epitaxial region [1]. In this paper we report on the application of optical surface photovoltage (SPV) using a set of ultra-shallow optical filters to both quantify and qualify as-grown epitaxial layers on CZ P-type silicon. We believe that a non-contact, SPV measurement of Fe concentration and diffusion lengths within an epitaxial region has not been previously reported.

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