Status of vacuum arc ion source development for injection of high current uranium ion beams into the GSI accelerator facility

Author(s):  
R. Hollinger ◽  
M. Galonska
1997 ◽  
Vol 46 (2) ◽  
pp. 588-591 ◽  
Author(s):  
D. Ratschko ◽  
B.G. Zhou ◽  
D. Knolle ◽  
M. Glaser
Keyword(s):  

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.


1992 ◽  
Vol 63 (4) ◽  
pp. 2481-2483 ◽  
Author(s):  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
Takatoshi Yamashita ◽  
Shuichi Fujiwara ◽  
Yutaka Inouchi ◽  
...  

Author(s):  
N. Sakudo ◽  
N. Ikenaga ◽  
R. Nishimoto ◽  
Y. Tamashiro ◽  
T. Shinohara ◽  
...  

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