Optical transmission properties of a planar waveguide structure fabricated on Nd:Li6Y(BO3)3 by C ion irradiation

Author(s):  
Xiao-fei Yu ◽  
Tao Liu ◽  
Lian Zhang ◽  
Hong-Lian Song ◽  
Yu-Fan Zhou ◽  
...  
1979 ◽  
Vol 18 (11) ◽  
pp. 1842 ◽  
Author(s):  
John D. Lytle ◽  
Gary W. Wilkerson ◽  
James G. Jaramillo

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.


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