Planar waveguide structure formed on Nd:YVO4 by Kr8+ ion irradiation at ultralow fluences

Author(s):  
Lian Zhang ◽  
Peng Liu ◽  
Tao Liu ◽  
Yu-Fan Zhou ◽  
Jian-Rong Sun ◽  
...  
1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.


2006 ◽  
Vol 14 (2) ◽  
Author(s):  
T. Pustelny ◽  
I. Zielonka ◽  
C. Tyszkiewicz ◽  
P. Karasiński ◽  
B. Pustelny

AbstractThe aim of the presented investigations was to develop a technique of producing Bragg’s grating couplers on planar waveguides. Waveguides are obtained by means of the sol-gel technology. The introduction of a light beam into the structure of the waveguide is in the case of planar or strip optical systems always an essential technical problem, requiring simple and reproducible solutions without extending excessively the waveguide structure. The paper presents a technology of producing grating couplers by impressing the pattern of the network while forming the planar waveguide structure applying the sol-gel method. Some remarks concerning the sol-gel technology are also presented. The results of investigations on grating couplers obtained in such a way have been discussed, too.Attention has been drawn to the possibility of using such structures in optoelectronic sensors, particularly gas sensors, including sensors of water vapour as well as toxic gases.


1995 ◽  
Vol 31 (19) ◽  
pp. 1667-1668 ◽  
Author(s):  
T. Kawasumi ◽  
Y. Mori ◽  
A. Ishibashi ◽  
N. Nakayama

2012 ◽  
Vol 4 (5) ◽  
pp. 1553-1559 ◽  
Author(s):  
Bei Chen ◽  
Ping-Rang Hua ◽  
Shi-Yu Xu ◽  
Dao-Yin Yu ◽  
Edwin Yue-Bun Pun ◽  
...  

2019 ◽  
Vol 8 (4) ◽  
pp. 89-102
Author(s):  
C. Dalle

The potential of a planar waveguide structure terahertz oscillator based on a gallium nitride distributed transferred electron device is theoretically investigated. The circuit numerical physical modeling relies on a two-dimensional time-domain electromagnetism/transport simulator. It is based on the coupled solution of the Maxwell and energy-momentum macroscopic transport equations. The study is focused on the analysis, from the space-time electromagnetic and electron transport quantities, of the complex CW operation of an oscillator, designed and DC biased, to optimally operate at one terahertz. The analysis is performed following a full electromagnetic approach in the time and frequency domain, at the local scale, for the description of the physical phenomena, as well as at the functional scale in order to obtain the quantities interesting the oscillator designer and user.


Sign in / Sign up

Export Citation Format

Share Document