Low-energy O+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate for silicon dioxide film formation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2021.11.022 ◽

2022 ◽

Vol 511 ◽

pp. 113-117

Author(s):

Satoru Yoshimura ◽

Satoshi Sugimoto ◽

Takae Takeuchi ◽

Kensuke Murai ◽

Masato Kiuchi

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Film Formation ◽

Ion Beam ◽

Chemical Vapor ◽

Tetraethyl Orthosilicate ◽

Silicon Dioxide Film ◽

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Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation

AIP Advances ◽

10.1063/5.0077660 ◽

2021 ◽

Vol 11 (12) ◽

pp. 125328

Author(s):

Satoru Yoshimura ◽

Satoshi Sugimoto ◽

Takae Takeuchi ◽

Masato Kiuchi

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Film Formation ◽

Ion Beam ◽

Chemical Vapor ◽

Silicon Dioxide Film ◽

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Characteristics of Silicon Dioxide Film Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone with Alcohol Addition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.2182 ◽

1995 ◽

Vol 34 (Part 1, No. 4B) ◽

pp. 2182-2190 ◽

Author(s):

Koichi Ikeda ◽

Satoshi Nakayama ◽

Masahiko Maeda

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Silicon Dioxide Film ◽

Pressure Chemical ◽

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Microstructure and interfacial states of silicon dioxide film grown by low temperature remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.370893 ◽

1999 ◽

Vol 86 (3) ◽

pp. 1346-1354 ◽

Author(s):

Young-Bae Park ◽

Shi-Woo Rhee

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Silicon Dioxide Film ◽

Interfacial States ◽

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Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism

Surface and Coatings Technology ◽

10.1016/s0257-8972(03)00852-1 ◽

2004 ◽

Vol 179 (2-3) ◽

pp. 229-236 ◽

Author(s):

Young-Bae Park ◽

Shi-Woo Rhee

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Growth Mechanism ◽

Vapor Deposition ◽

Chemical Vapor ◽

Film Deposition ◽

Silicon Dioxide Film ◽

Chemical Vapor Deposition Growth ◽

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Low-Temperature Growth of Silicon Dioxide Film by Photo-Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.23.l827 ◽

1984 ◽

Vol 23 (Part 2, No. 11) ◽

pp. L827-L829 ◽

Author(s):

Yasuo Tarui ◽

Junichi Hidaka ◽

Katsumi Aota

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Dioxide Film ◽

Temperature Growth ◽

Low Temperature Growth ◽

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Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8905 ◽

2008 ◽

Vol 47 (12) ◽

pp. 8905-8908

Author(s):

Young Im ◽

Jung Hee Lee ◽

Youn-Seoung Lee ◽

Won-Jun Lee ◽

Sa-Kyun Rha

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Neutral Beam ◽

Silicon Dioxide Film ◽

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Densification of Chemical Vapor Deposition Silicon Dioxide Film Using Ozone Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.101401 ◽

2009 ◽

Vol 48 (10) ◽

pp. 101401 ◽

Author(s):

Kazumasa Kawase ◽

Seiji Noda ◽

Takafumi Nakai ◽

Yasushi Uehara

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ozone Treatment ◽

Silicon Dioxide Film ◽

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Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation

Journal of Applied Physics ◽

10.1063/1.3679553 ◽

2012 ◽

Vol 111 (3) ◽

pp. 034101 ◽

Author(s):

Kazumasa Kawase ◽

Akinobu Teramoto ◽

Hiroshi Umeda ◽

Tomoyuki Suwa ◽

Yasushi Uehara ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Oxygen Radical ◽

Silicon Dioxide Film ◽

Radical Oxidation ◽

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Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4886770 ◽

2014 ◽

Vol 32 (5) ◽

pp. 051502 ◽

Author(s):

Kazumasa Kawase ◽

Tsukasa Motoya ◽

Yasushi Uehara ◽

Akinobu Teramoto ◽

Tomoyuki Suwa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Dioxide Film ◽

Ar Plasma ◽

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Unexpected Penetration of AuGe/Pt Metal into a Interface Between a Atmospheric Chemical Vapor Deposition Silicon Dioxide Film and GaAs Wafer Surface

MRS Proceedings ◽

10.1557/proc-300-291 ◽

1993 ◽

Vol 300 ◽

Author(s):

Yasuyuki Saito

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Ohmic Contact ◽

Vapor Deposition ◽

Chemical Vapor ◽

Wafer Surface ◽

Gaas Crystal ◽

Silicon Dioxide Film ◽

Catalytic Metal ◽

ABSTRACTIt was observed that thin metal (catalytic metal: platinum) penetrated into a interface between a chemical vapor deposition (CVD) silicon dioxide film and a Si–implanted electric thermal furnace, on the way to carrying out experiments on alloyed ohmic–metals with Si–implanted electrically conductive n–type GaAs crystal layers in order to obtain stable and uniform ohmic contact electrodes of low specific ohmic contact resistances for metal–semiconductor field–effect–transistor arrays as a observation tool of semi–insulating GaAs–crystal crystallographic uniformity.

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