Temperature and pressure are the most common parameters to be measured and
monitored not only in industrial processes but in many other fields from
vehicles and healthcare to household appliances. Silicon
microelectromechanical (MEMS) piezoresistive pressure sensors are the first
and the most successful MEMS sensors, offering high sensitivity, solid-state
reliability and small dimensions at a low cost achieved by mass production.
The inherent temperature dependence of the output signal of such sensors
adversely affects their pressure measurement performance, necessitating the
use of correction methods in a majority of cases. However, the same effect
can be utilized for temperature measurement, thus enabling new sensor
applications. In this paper we perform characterization of MEMS
piezoresistive pressure sensors for temperature measurement, propose a sensor
correction method, and demonstrate that the measurement error as low as ?
0.3?C can be achieved.