Interfacial charge transfer complex between TiO2 and non-aromatic ligand squaric acid

2022 ◽  
Vol 123 ◽  
pp. 111918
Author(s):  
Zuzana Barbieriková ◽  
Miriama Šimunková ◽  
Vlasta Brezová ◽  
Dušan Sredojević ◽  
Vesna Lazić ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Charge Transfer Complex ◽  
Squaric Acid ◽  
Interfacial Charge Transfer ◽  
Aromatic Ligand ◽  
Interfacial Charge

scholarly journals Fermi level pinned molecular donor/acceptor junctions: reduction of induced carrier density by interfacial charge transfer complexes

2020 ◽  
Vol 8 (43) ◽  
pp. 15199-15207
Author(s):  
Paul Beyer ◽  
Eduard Meister ◽  
Timo Florian ◽  
Alexander Generalov ◽  
Wolfgang Brütting ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Carrier Density ◽  
Charge Transfer Complex ◽  
Charge Transfer Complexes ◽  
Interfacial Charge Transfer ◽  
Fermi Level Pinning ◽  
Donor Acceptor ◽  
Interfacial Charge

Charge transfer complex (CPX) formation at a donor–acceptor interface reduces the amount of Fermi-level pinning induced interfacial charge transfer.

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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