Improved performance in n-channel organic thin film transistors by nanoscale interface modification

Organic Thin Film ◽

Interface Modification ◽

Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin-Film Transistors: Structural Stability and Improved Performance

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c06418 ◽

2020 ◽

Vol 12 (25) ◽

pp. 28416-28425 ◽

Cited By ~ 2

Author(s):

Adara Babuji ◽

Inés Temiño ◽

Ana Pérez-Rodríguez ◽

Olga Solomeshch ◽

Nir Tessler ◽

...

Keyword(s):

Thin Film ◽

Structural Stability ◽

Thin Film Transistors ◽

Organic Thin Film ◽

Beneficial Role ◽

Performance improvement of organic thin film transistors by SiO2/pentacene interface modification using an electrostatically assembled PDDA monolayer

Solid-State Electronics ◽

10.1016/j.sse.2005.10.040 ◽

2006 ◽

Vol 50 (2) ◽

pp. 129-133 ◽

Cited By ~ 5

Author(s):

Mo Zhu ◽

Kody Varahramyan

Keyword(s):

Thin Film ◽

Performance Improvement ◽

Thin Film Transistors ◽

Organic Thin Film ◽

High Density Design Packaging and Microsystem Integration, 2007 International Symposium on ◽

Improved Performance Organic Thin-film Transistors with Modified Gate Insulators

10.1109/hdp.2007.4283618 ◽

2007 ◽

Author(s):

Chen Ling ◽

Zhu Wen Qing ◽

Bai Yu ◽

Liu Xiang ◽

Jiang Xue Yin ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film ◽

Gate Insulators ◽

Interface Modification in Organic Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2783 ◽

2005 ◽

Vol 44 (4B) ◽

pp. 2783-2786 ◽

Cited By ~ 16

Author(s):

Bo-Tan Wu ◽

Yan-Kuin Su ◽

Ming-Lung Tu ◽

An-Chang Wang ◽

You-Sian Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film ◽

Interface Modification in Organic Thin Film Transistors

10.7567/ssdm.2004.p13-2 ◽

2004 ◽

Author(s):

Bo-Tan Wu ◽

Yan-Kuin Su ◽

An-Chang Wang ◽

Ming-Lung Tu ◽

You Sian Chen

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film ◽

Effect of Interface Modification Conditions on Electrical Characteristics and Device Consistency of Organic Thin Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2021.3126557 ◽

2021 ◽

pp. 1-1

Author(s):

Xincheng Zhang ◽

Meng Zhang ◽

Yan Yan ◽

Ye Zhou ◽

Man Wong ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Electrical Characteristics ◽

Organic Thin Film ◽

Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/23/11/062 ◽

2006 ◽

Vol 23 (11) ◽

pp. 3108-3110 ◽

Cited By ~ 5

Author(s):

Wang Wei ◽

Shi Jia-Wei ◽

Guo Shu-Xu ◽

Zhang Hong-Mei ◽

Quan Bao-Fu ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film ◽

Insulator Layer ◽

Improved performance of inkjet-printed Ag source/drain electrodes for organic thin-film transistors by overcoming the coffee ring effects

AIP Advances ◽

10.1063/1.5004136 ◽

2017 ◽

Vol 7 (11) ◽

pp. 115008 ◽

Cited By ~ 5

Author(s):

Cheng-Fang Liu ◽

Yan Lin ◽

Wen-Yong Lai ◽

Wei Huang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film ◽

Coffee Ring ◽

Alkoxy substituted [1]benzothieno[3,2-b][1]benzothiophene derivative with improved performance in organic thin film transistors

Organic Electronics ◽

10.1016/j.orgel.2018.02.003 ◽

2018 ◽

Vol 56 ◽

pp. 68-75 ◽

Cited By ~ 8

Author(s):

Shenghui Guo ◽

Yaowu He ◽

Imran Murtaza ◽

Jiahui Tan ◽

Junyou Pan ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film ◽

Improved Performance ◽

Substituted 1

High mobility solution-processed C8-BTBT organic thin-film transistors via UV-ozone interface modification

Journal of Materials Chemistry C ◽

10.1039/c7tc03794e ◽

2017 ◽

Vol 5 (40) ◽

pp. 10652-10659 ◽

Cited By ~ 17

Author(s):

Weiyao Wei ◽

Cheng Yang ◽

Jiaying Mai ◽

Yanfen Gong ◽

Longsen Yan ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Mobility ◽

Dielectric Surface ◽

Ozone Exposure ◽

Organic Thin Film ◽

Interface Modification ◽

Mobility Solution ◽

Uv Ozone

UV-ozone exposure directly on the dielectric surface to get an OTFT mobility as high as 6.50 cm2(V s)−1.