scholarly journals Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin-Film Transistors: Structural Stability and Improved Performance

2020 ◽  
Vol 12 (25) ◽  
pp. 28416-28425 ◽  
Author(s):  
Adara Babuji ◽  
Inés Temiño ◽  
Ana Pérez-Rodríguez ◽  
Olga Solomeshch ◽  
Nir Tessler ◽  
...  
Keyword(s):  
Thin Film ◽  
Structural Stability ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Beneficial Role ◽  
Improved Performance

Printed dual-gate organic thin film transistors and PMOS inverters on flexible substrates: Role of top gate electrode

2021 ◽  
Author(s):  
Subhash Singh ◽  
Hiroyuki Matsui ◽  
Shizuo Tokito
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polyethylene Naphthalate ◽  
Gate Electrode ◽  
Noise Margin ◽  
Dual Gate

Abstract We report printed single and dual-gate organic thin film transistors (OTFTs) and PMOS inverters fabricated on 125 µm-thick flexible polyethylene naphthalate (PEN) substrate. All the electrodes (gate, source, and drain) are inkjet-printed, while the parylene dielectric is formed by chemical vapor deposition. A dispenser system is used to print the active channel material using a blend of 2,7-dihexyl-dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene (DTBDT-C6) and polystyrene (PS) in tetralin solvent, which gives highest mobility of 0.43 cm2/Vs. Dual-gate OTFTs are characterized by keeping the other gate electrode either in grounded or floating state. Floating gate electrode devices shows higher apparent mobility and current ratio due to additional capacitance of the parylene dielectric. PMOS inverter circuits are characterized in terms of gain, trip point and noise margin values calculated from the voltage transfer characteristics (VTC). Applied top gate voltage on the load OTFT control the conductivity or threshold voltage (VTh) of the bottom TFT and shift the trip point towards the middle of the VTC curve, and hence increase the noise margin.

Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors

2006 ◽  
Vol 23 (11) ◽  
pp. 3108-3110 ◽  
Author(s):  
Wang Wei ◽  
Shi Jia-Wei ◽  
Guo Shu-Xu ◽  
Zhang Hong-Mei ◽  
Quan Bao-Fu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Insulator Layer ◽  
Improved Performance

scholarly journals Organic Thin Film Transistors Based on Distyryl-Oligothiophenes: Role of AFM Images in Analyses of Charge Transport Properties

2012 ◽  
Vol 02 (04) ◽  
pp. 283-293 ◽  
Author(s):  
Noriyuki Yoshimoto ◽  
Hugues Brisset ◽  
Jorg Ackermann ◽  
Christine Videlot-Ackermann
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Transport Properties ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

2018 ◽  
Vol 20 (26) ◽  
pp. 17889-17898 ◽  
Author(s):  
Marta Reig ◽  
Gintautas Bagdziunas ◽  
Arunas Ramanavicius ◽  
Joaquim Puigdollers ◽  
Dolores Velasco
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
State Organization ◽  
P Type

Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance.

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