Stable charge retention in graphene-MoS 2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices

2018 ◽  
Vol 58 ◽  
pp. 145-152 ◽  
Author(s):  
Snigdha Bhattacharjee ◽  
Ujjal Das ◽  
Pranab Kumar Sarkar ◽  
Asim Roy
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Switching Effect ◽  
Charge Retention ◽  
Organic Memory ◽  
Organic Memory Devices ◽  
Resistive Switching Effect

Investigation of Time-Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices

2018 ◽  
Vol 28 (35) ◽  
pp. 1801162 ◽  
Author(s):  
Woocheol Lee ◽  
Youngrok Kim ◽  
Younggul Song ◽  
Kyungjune Cho ◽  
Daekyoung Yoo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Time Dependent ◽  
Memory Devices ◽  
Organic Memory ◽  
Organic Memory Devices

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

2012 ◽  
Vol 116 (33) ◽  
pp. 17955-17959 ◽  
Author(s):  
Shuang Gao ◽  
Cheng Song ◽  
Chao Chen ◽  
Fei Zeng ◽  
Feng Pan
Keyword(s):  
Resistive Switching ◽  
Dynamic Processes ◽  
Memory Devices ◽  
Organic Memory ◽  
Organic Memory Devices ◽  
Metallic Filament

scholarly journals Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125213 ◽  
Author(s):  
Zijin Wu ◽  
Tongtong Wang ◽  
Changqi Sun ◽  
Peitao Liu ◽  
Baorui Xia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Switching Effect ◽  
Nonvolatile Memory Devices ◽  
Resistive Switching Effect

Resistive switching phenomena induced by the heterostructure composite of ZnSnO3 nanocubes interspersed ZnO nanowires

2017 ◽  
Vol 5 (22) ◽  
pp. 5528-5537 ◽  
Author(s):  
Ghayas Uddin Siddiqui ◽  
Muhammad Muqeet Rehman ◽  
Kyung Hyun Choi
Keyword(s):  
Power Consumption ◽  
Resistive Switching ◽  
Simple Structure ◽  
Low Cost ◽  
Zno Nanowires ◽  
Memory Devices ◽  
Switching Effect ◽  
High Scalability ◽  
Resistive Switching Effect

The resistive switching effect of various materials has been investigated because of their promising advantages such as high scalability, low cost, simple structure and less power consumption of such memory devices.

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