The enhanced conductivity and stability of AZO thin films with a TiO2 buffer layer

2012 ◽  
Vol 407 (23) ◽  
pp. 4518-4522 ◽  
Author(s):  
Tianlin Yang ◽  
Shumei Song ◽  
Yanhui Li ◽  
Yanqing Xin ◽  
Guiqiang Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Tio2 Buffer Layer ◽  
Enhanced Conductivity

Enhancement of the Electrical Properties of GZO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer

2007 ◽  
Vol 51 (5) ◽  
pp. 1732-1735 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Se-Hyun Kim ◽  
Dae-Young Moon ◽  
Woong-Sun Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Tio2 Buffer Layer

Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

2013 ◽  
Vol 39 (5) ◽  
pp. 5795-5803 ◽  
Author(s):  
Y.C. Lin ◽  
C.Y. Hsu ◽  
S.K. Hung ◽  
D.C. Wen
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno ◽  
Tio2 Buffer Layer

Effect of amorphous TiO2 buffer layer on the phase formation of CaBi4Ti4O15 ferroelectric thin films

2005 ◽  
Vol 81 (4) ◽  
pp. 861-864 ◽  
Author(s):  
K. Kato ◽  
K. Suzuki ◽  
K. Tanaka ◽  
D. Fu ◽  
K. Nishizawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Phase Formation ◽  
Ferroelectric Thin Films ◽  
Amorphous Tio2 ◽  
Tio2 Buffer Layer

Electrical Characteristics of LSMCD-Derived SrBi2.4Ta2O9 Thin Films Using TiO2 Buffer Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices

2000 ◽  
Vol 623 ◽  
Author(s):  
Joo Dong Park ◽  
Tae Sung Oh
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Deposition ◽  
Memory Window ◽  
Buffer Layers ◽  
Liquid Source ◽  
Effect Transistor ◽  
Tio2 Buffer Layer

AbstractPt/SBT/TiO2/Si structure was proposed for metal/ferroelectric/insulator/semiconductor field effect transistor (MFIS-FET) applications. SrBi2.4 Ta2O9 (SBT) thin films of 400 nm thickness were prepared using liquid source misted chemical deposition (LSMCD) on Si(100) substrates with TiO2 buffer layers deposited by DC reactive sputtering with the thickness ranging from 5 nm to 200 nm and electrical properties of MFIS structures were investigated. Memory window and maximum capacitance of the Pt/SBT/TiO2 /Si structure increased with decreasing the thickness of TiO2 buffer layer. The Pt/SBT(400 nm)/TiO2(10 nm)/Si structure exhibited C-V hysteresis loop with the memory window of 1.6 V at ±5 V, and could be applicable for MFISFET applications.

a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer

2006 ◽  
Vol 100 (8) ◽  
pp. 084106 ◽  
Author(s):  
A. Z. Simões ◽  
R. F. C. Pianno ◽  
A. Ries ◽  
J. A. Varela ◽  
E. Longo
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Tio2 Buffer Layer

Improvement of the electrical properties of PZT thin films using TiO2 buffer layer

2001 ◽  
Vol 39 (1-4) ◽  
pp. 143-150 ◽  
Author(s):  
Kwangbae Lee ◽  
Byung Roh Rhee ◽  
Chanku Lee
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Pzt Thin Films ◽  
Tio2 Buffer Layer

Influence of a TiO2 buffer layer on the magnetic properties of anatase Co:TiO2 thin films

2012 ◽  
Vol 111 (8) ◽  
pp. 083917 ◽  
Author(s):  
M. S. Gabor ◽  
T. Petrisor ◽  
C. Tiusan ◽  
M. Hehn ◽  
B. S. Vasile ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Buffer Layer ◽  
Tio2 Buffer Layer
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