Strong impact of SrTiO3/TiO2 buffer layer on epitaxial growth and dielectric response of Ba0.7Sr0.3TiO3 thin films on MgO

2018 ◽  
Vol 57 (9) ◽  
pp. 0902B1
Author(s):  
Shinya Kondo ◽  
Tomoaki Yamada ◽  
Masahito Yoshino ◽  
Takanori Nagasaki
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Dielectric Response ◽  
Strong Impact ◽  
Tio2 Buffer Layer

Enhancement of the Electrical Properties of GZO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer

2007 ◽  
Vol 51 (5) ◽  
pp. 1732-1735 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Se-Hyun Kim ◽  
Dae-Young Moon ◽  
Woong-Sun Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Tio2 Buffer Layer

Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer

2004 ◽  
Vol 264 (1-3) ◽  
pp. 463-467 ◽  
Author(s):  
D. Akai ◽  
K. Hirabayashi ◽  
M. Yokawa ◽  
K. Sawada ◽  
M. Ishida
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrates

Epitaxial growth of cubic Mg0.45Zn0.55O thin films on SrTiO3 (001) substrate with MgO buffer layer

2013 ◽  
Vol 377 ◽  
pp. 78-81 ◽  
Author(s):  
Dapeng Zhu ◽  
Li Cai ◽  
Shumin He ◽  
Guolei Liu ◽  
Shishen Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer

The enhanced conductivity and stability of AZO thin films with a TiO2 buffer layer

2012 ◽  
Vol 407 (23) ◽  
pp. 4518-4522 ◽  
Author(s):  
Tianlin Yang ◽  
Shumei Song ◽  
Yanhui Li ◽  
Yanqing Xin ◽  
Guiqiang Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Tio2 Buffer Layer ◽  
Enhanced Conductivity

Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

2013 ◽  
Vol 39 (5) ◽  
pp. 5795-5803 ◽  
Author(s):  
Y.C. Lin ◽  
C.Y. Hsu ◽  
S.K. Hung ◽  
D.C. Wen
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno ◽  
Tio2 Buffer Layer

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

2019 ◽  
Vol 494 ◽  
pp. 644-650 ◽  
Author(s):  
Wen-Cheng Ke ◽  
Zhong-Yi Liang ◽  
Solomun Teklahymanot Tesfay ◽  
Chih-Yung Chiang ◽  
Cheng-Yi Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

2020 ◽  
Vol 127 (21) ◽  
pp. 214104
Author(s):  
E. N. Jin ◽  
A. C. Lang ◽  
M. T. Hardy ◽  
N. Nepal ◽  
D. S. Katzer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Tio2 Buffer Layer

Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer

2002 ◽  
Vol 80 (13) ◽  
pp. 2323-2325 ◽  
Author(s):  
H. Wang ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer
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