Band gap modulation of mono and bi-layer hexagonal ZnS under transverse electric field and bi-axial strain: A first principles study

2018 ◽  
Vol 531 ◽  
pp. 90-94 ◽  
Author(s):  
D.P. Rai ◽  
Sumandeep Kaur ◽  
Sunita Srivastava
2020 ◽  
Vol 22 (35) ◽  
pp. 19957-19968
Author(s):  
Supriya Ghosal ◽  
Arka Bandyopadhyay ◽  
Debnarayan Jana

Transverse electric field breaks the sublattice symmetry and generates a band gap in the semi-metallic T-Ge structure.


2005 ◽  
Vol 72 (24) ◽  
Author(s):  
Li-Gan Tien ◽  
Chuen-Horng Tsai ◽  
Feng-Yin Li ◽  
Ming-Hsien Lee

2013 ◽  
Vol 46 (23) ◽  
pp. 235101 ◽  
Author(s):  
Nuo Liu ◽  
Zheqi Zheng ◽  
Yongxin Yao ◽  
Guiping Zhang ◽  
Ning Lu ◽  
...  

AIP Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 117225 ◽  
Author(s):  
Jia Li ◽  
Zhidong Zhang ◽  
Zunming Lu ◽  
Hongxian Xie ◽  
Wei Fang ◽  
...  

2018 ◽  
Vol 20 (26) ◽  
pp. 18110-18116 ◽  
Author(s):  
Jinjin Wang ◽  
Zhanyu Wang ◽  
R. J. Zhang ◽  
Y. X. Zheng ◽  
L. Y. Chen ◽  
...  

Our calculations show that the electronic properties of few-layer penta-graphene can obviously be modulated through an external electric field.


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