High-performance single grain Y–Ba–Cu–O bulk superconductor fabricated by seeded infiltration and growth

2006 ◽  
Vol 445-448 ◽  
pp. 277-281 ◽  
Author(s):  
K. Iida ◽  
N.H. Babu ◽  
T.D. Withnell ◽  
Y. Shi ◽  
S. Haindl ◽  
...  
Author(s):  
Guo-Zheng Li ◽  
Miao Wang

Abstract A novel preform compaction method based on one new type of divisible mould was employed for fabricating single-grain YBCO bulk superconductor, which can complete the preform demoulding process through opening of the mould, rather than pushing the preform out in the regular mould. Thus it has natural superiority on eliminating macro-cracks, which has been proved by the sample surface morphology and the trapped field characterization. In addition, the divisible mould pressed sample exhibits higher levitation force and trapped field properties than the regular mould pressed samples, verifying the potentials of the divisible mould on improving the bulk performance. The optical micrograph results prove the superiority of the divisible mould on eliminating tiny cracks on sample surface. The processing facility and sample reliability brought by the divisible mould should also be emphasized, because the crushing and re-pressing of preform when it presents visible cracks can be omitted and the failed samples with surface cracks will no longer appear. Consequently, the experimental efficiency and stability are both enhanced.


2010 ◽  
Vol 470 (2) ◽  
pp. 155-158 ◽  
Author(s):  
P. Diko ◽  
V. Antal ◽  
M. Kaňuchová ◽  
M. Jirsa ◽  
K. Jurek

2011 ◽  
Vol 94 (9) ◽  
pp. 3139-3143 ◽  
Author(s):  
Ling Cheng ◽  
Tianyu Li ◽  
Shibin Yan ◽  
Lijie Sun ◽  
Xin Yao ◽  
...  

2009 ◽  
Vol 1153 ◽  
Author(s):  
Alessandro Baiano ◽  
Ryoichi Ishihara ◽  
Kees Beenakker

AbstractIn this paper we investigate the carriers mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors (SG-TFTs) by μ-Czochralski process at low-temperature process (< 350 °C). The high laser energy density nearby the ablation phenomenon that completely melts the silicon layer during the crystallization is responsible for high tensile strain and good crystal quality of the silicon grains, which lead carriers mobility enhancement.


2014 ◽  
Vol 97 (12) ◽  
pp. 3725-3728 ◽  
Author(s):  
Guo-Zheng Li ◽  
Lei Dong ◽  
Jian-Hua Deng ◽  
Xiang-Yun Deng ◽  
Wan-Min Yang

2005 ◽  
Vol 87 (20) ◽  
pp. 202506 ◽  
Author(s):  
N. Hari Babu ◽  
K. Iida ◽  
Y. Shi ◽  
D. A. Cardwell

2015 ◽  
Vol 28 (10) ◽  
pp. 105011 ◽  
Author(s):  
Miao Wang ◽  
Peng-tao Yang ◽  
Wan-min Yang ◽  
Jia-wei Li ◽  
Qadeer UI Hassan

2017 ◽  
Vol 30 (3) ◽  
pp. 035019
Author(s):  
Zhi Li ◽  
Tetsuya Ida ◽  
Motohiro Miki ◽  
Hidekazu Teshima ◽  
Mitsuru Morita ◽  
...  

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