A new single buffer layer for YBCO coated conductors prepared by chemical solution deposition

2007 ◽  
Vol 452 (1-2) ◽  
pp. 43-47 ◽  
Author(s):  
Guo Li ◽  
Minghua Pu ◽  
Xiaohua Du ◽  
Yanbing Zhang ◽  
Huaming Zhou ◽  
...  
2013 ◽  
Vol 26 (7) ◽  
pp. 075016 ◽  
Author(s):  
Leopoldo Molina-Luna ◽  
Ricardo Egoavil ◽  
Stuart Turner ◽  
Thomas Thersleff ◽  
Jo Verbeeck ◽  
...  

2006 ◽  
Vol 21 (3) ◽  
pp. 767-773 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
A. Goyal ◽  
L. Heatherly ◽  
D.B. Beach

Epitaxial films of rare-earth (RE = La, Ce, Eu, and Gd) tantalates, RE3TaO7 with pyrochlore structures were grown on biaxially textured nickel-3 at.% tungsten (Ni-W) substrates using chemical solution deposition (CSD) process. Precursor solution of 0.3∼0.4 M concentration of total cations were spin coated on to short samples of Ni-W substrates and the films were crystallized at 1050∼1100 °C in a gas mixture of Ar- 4% H2 for 15 to 60 min. X-ray studies show that the films of pyrochlore RE tantalate films are highly textured with cube-on-cube epitaxy. Improved texture was observed in case of lanthanum tantalate (La3TaO7) film grown on Ni-W substrates. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations of RE3TaO7 films reveal a fairly dense and smooth microstructure without cracks and porosity. The rare-earth tantalate layers may be potentially used as buffer layers for YBa2Cu3O7-δ (YBCO) coated conductors.


2013 ◽  
Vol 27 (15) ◽  
pp. 1362018 ◽  
Author(s):  
MING LEI ◽  
XINSHENG YANG ◽  
YONG ZHAO

NiO layers were prepared in Ar flow at temperatures between 750°C to 850°C by using surface oxidation epitaxial method on Ni –5%W alloy substrates. NiO (200) buffer layer with well textured, smooth, dense and crack-free surface was prepared in Ar ambience with a flow rate of 500 ml/min at 800°C for 10.0 min. Then SmBiO 3 buffer layer was coated on the well epitaxial NiO (200) layer by chemical solution deposition (CSD) method.


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