Local electron density near the 2DES boundary formed by side-gate voltage in the quantum Hall regime

2004 ◽  
Vol 22 (1-3) ◽  
pp. 173-176
Author(s):  
K. Arai ◽  
S. Hashimoto ◽  
K. Oto
Keyword(s):  
Electron Density ◽  
Gate Voltage ◽  
Quantum Hall ◽  
Local Electron ◽  
Local Electron Density ◽  
Quantum Hall Regime ◽  
Hall Regime

LOCAL ELECTRON DENSITY PROFILE NEAR THE SAMPLE BOUNDARY INVESTIGATED BY MAGNETO-CAPACITANCE IN QUANTUM HALL REGIME

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3581-3584
Author(s):  
K. OTO ◽  
M. KIMURA ◽  
Y. MIWA
Keyword(s):  
Electron Density ◽  
Density Profile ◽  
Quantum Hall ◽  
Electron Density Profile ◽  
Depletion Region ◽  
Local Electron ◽  
Local Electron Density ◽  
Quantum Hall Regime ◽  
Hall Regime ◽  
The Wire

The spatial profiles of the electron density near the edge of narrow wires made from GaAs / AlGaAs heterostructure have been investigated using magneto-capacitance measurements in quantum Hall conditions. With decreasing the wire width below one micron, the profile of the electron density becomes steep and the electron density decreases due to the confinement potential at the boundaries of the wire. The extent of the depletion region and the local electron density near the wire edge is strongly influenced by the wire width, especially in sub-micron wires. The evaluation techniques of the local electron density profile near the edge are discussed in detail.

INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1445-1449
Author(s):  
K. TAKEHANA ◽  
Y. IMANAKA ◽  
T. TAKAMASU ◽  
M. HENINI
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Gate Voltage ◽  
Quantum Hall ◽  
Electron System ◽  
Hall Resistance ◽  
Field Range ◽  
Voltage Range ◽  
Quantum Hall Regime ◽  
Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

scholarly journals Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime

1987 ◽  
Vol 62 (2) ◽  
pp. 89-91 ◽  
Author(s):  
D. Weiss ◽  
V. Mosser ◽  
V. Gudmundsson ◽  
R.R. Gerhardts ◽  
K.v. Klitzing
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Gate Voltage ◽  
Magnetic Field Dependence ◽  
Quantum Hall ◽  
Quantum Hall Regime ◽  
Hall Regime

scholarly journals Nonlinear optics in the fractional quantum Hall regime

Nature ◽  
2019 ◽  
Vol 572 (7767) ◽  
pp. 91-94 ◽  
Author(s):  
Patrick Knüppel ◽  
Sylvain Ravets ◽  
Martin Kroner ◽  
Stefan Fält ◽  
Werner Wegscheider ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Quantum Hall ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Hall Regime ◽  
Hall Regime
Sign in / Sign up

Export Citation Format

Share Document