An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide

Author(s):  
Alexander E. Galashev ◽  
Alexey S. Vorob'ev
2017 ◽  
Vol 42 (16) ◽  
pp. 11452-11460 ◽  
Author(s):  
Jessiel Siaron Gueriba ◽  
Allan Abraham Bustria Padama ◽  
Al Rey Villagracia ◽  
Melanie David ◽  
Nelson Arboleda ◽  
...  

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4335-4341 ◽  
Author(s):  
Giacomo Levita ◽  
Luca Petaccia ◽  
Alessio Comisso ◽  
Silvano Lizzit ◽  
Rosanna Larciprete ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Blair R. Tuttle ◽  
Nathan J. Held ◽  
Lai Hin Lam ◽  
Yu-Yang Zhang ◽  
Sokrates T. Pantelides

Nanoporous silicon carbide is part of the important organosilicate class of low dielectric constant alloys. We report first-principles microscopic calculations of the properties of crystalline nanoporous SiCH systems. Properties examined include the density, pore size, dielectric constant, and strain moduli. We examined the relationship between the various properties and the amount of hydrogen in the material. In addition, the bonding topology is examined. The present results are compared with a variety of experiments.


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